Now showing items 1-3 of 3

    • Electronic and optical properties of 4.2 μm"N" structured superlattice MWIR photodetectors 

      Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydinli, A. (Elsevier, 2013)
      We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier ...
    • High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers 

      Ergun, Y.; Hostut, M.; Tansel, T.; Muti, bdullah; Kilic, A.; Turan, R.; Aydınlı, Atilla (SPIE, 2013)
      We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave ...
    • N-structure based on InAs/AlSb/GaSb superlattice photodetectors 

      Hostut, M.; Alyoruk, M.; Tansel, T.; Kilic, A.; Turan, R.; Aydinli, A.; Ergun, Y. (Academic Press, 2015)
      We have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies ...