Now showing items 1-3 of 3

    • Atomic layer deposited Al 2O 3 passivation of type II InAs/GaSb superlattice photodetectors 

      Salihoğlu, Ömer; Muti, Abdullah; Kutluer, Kutlu; Tansel, T.; Turan, R.; Kocabaş, Coşkun; Aydınlı, Atilla (AIP, 2012)
      Taking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al 2O 3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single ...
    • Experimental verification of metamaterial based subwavelength microwave absorbers 

      Alici, K. B.; Bilotti, F.; Vegni, L.; Özbay, Ekmel (American Institute of Physics, 2010-10-29)
      We designed, implemented, and experimentally characterized electrically thin microwave absorbers by using the metamaterial concept. The absorbers consist of (i) a metal back plate and an artificial magnetic material layer; ...
    • Nanocrystal light-emitting diodes based on type II nanoplatelets 

      Liu, B.; Delikanli S.; Gao, Y.; Dede, D.; Gungor K.; Demir, Hilmi Volkan (Elsevier BV, 2018)
      Colloidal semiconductor nanoplatelets (NPLs) have recently emerged as a new family of semiconductor nanocrystals with distinctive structural and electronic properties originating from their atomically flat architecture. ...