Browsing by Keywords "Transport properties"

Now showing items 1-9 of 9

    • Atomic strings of group IV, III-V, and II-VI elements 

      Tongay, S.; Durgun, E.; Ciraci, S. (American Institute of Physics, 2004)
      A systematic first-principles study of atomic strings made by group IV, III-V, and II-VI elements has revealed interesting mechanical, electronic, and transport properties. The double bond structure underlies their unusual ...

    • Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs 

      Celik O.; Tiras, E.; Ardali, S.; Lisesivdin, S.B.; Ozbay, E. (2011)
      Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained ...

    • Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires 

      Keleş, Ü.; Çakan, A.; Bulutay, C. (A I P Publishing LLC, 2015)
      We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the ...

    • Effective mass of electron in monolayer graphene: Electron-phonon interaction 

      Tiras, E.; Ardali, S.; Tiras, T.; Arslan, E.; Cakmakyapan, S.; Kazar, O.; Hassan, J.; Janzén, E.; Ozbay, E. (AIP Publishing LLC, 2013-01-25)
      Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m -1 and magnetic fields up to 11 T, have been used to investigate the electronic ...

    • Electrical conduction properties of Si δ-doped GaAs grown by MBE 

      Yildiz, A.; Lisesivdin, S.B.; Altuntas H.; Kasap, M.; Ozcelik, S. (2009)
      The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at ...

    • Quantum effects in electrical and thermal transport through nanowires 

      Ciraci, S.; Buldum, A.; Batra, I. P. (Institute of Physics Publishing, 2001)
      Nanowires, point contacts and metallic single-wall carbon nanotubes are one-dimensional nanostructures which display important size-dependent quantum effects. Quantization due to the transverse confinement and resultant ...

    • Size-dependent alternation of magnetoresistive properties in atomic chains 

      Durgun, E.; Senger, R. T.; Mehrez, H.; Sevinçli, H.; Ciraci, S. (American Institute of Physics, 2006)
      Spin-polarized electronic and transport properties of carbon atomic chains are investigated when they are capped with magnetic transition-metal (TM) atoms like Cr or Co. The magnetic ground state of the TM-C n-TM chains ...

    • Spintronic properties of zigzag-edged triangular graphene flakes 

      Şahin, H.; Senger, R. T.; Ciraci, S. (AIP Publishing LLC, 2010)
      We investigate quantum transport properties of triangular graphene flakes with zigzag edges by using first principles calculations. Triangular graphene flakes have large magnetic moments which vary with the number of ...

    • Thermoelectric efficiency in model nanowires 

      Badalov, Sabuhi (Bilkent University, 2013)
      Nowadays, the use of thermoelectric semiconductor devices are limited by their low efficiencies. Therefore, there is a huge amount of research effort to get high thermoelectric efficient materials with a fair production ...