Now showing items 1-5 of 5

    • AlGaN/GaN HEMT-based fully monolithic X-band low noise amplifier 

      Schwindt, R.; Kumar, V.; Aktas, O.; Lee, J. W.; Adesida, I. (Wiley, 2005-04)
      A fully monolithic AlGaN/GaN HEMT-based low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of -7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz. The ...
    • AlGaN/GaN-Based laterally gated high-electron-mobility transistors with optimized linearity 

      Odabaşı, Oğuz; Yılmaz, Doğan; Aras, Erdem; Asan, Kübra Elif; Zafar, Salahuddin; Çankaya Akoğlu, Büşra; Bütün, Bayram; Özbay, Ekmel (IEEE, 2021-02-01)
      In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity of laterally gated ...
    • Analog CMOS implementation of cellular neural networks 

      Baktır, İzzet Adil (Bilkent University, 1991)
      An analog CMOS circuit realization of cellular neural networks with transconductance elements is presented in this thesis. This realization can be easily adapted to various types of applications in image processing by ...
    • Biquadratic transconductance switched-capacitor filters 

      Tan, M. A. (IEEE, 1993-04)
      Switched-capacitor (SC) filters yield efficient implementations in integrated form. However, they employ op-amps, each of which must be designed for a given filter separately. Furthermore, SC filters are not tunable. This ...
    • A reduction in the number of active components used in transconductance grounded capacitor filters 

      Tan, Mehmet Ali; Schaumann, R. (IEEE, 1990)
      The number of active components in transconductance grounded capacitor filters is reduced. This reduction is possible in the case where capacitor loops and/or inductor cutsets exist in LC-ladder prototype. A more significant ...