Now showing items 1-2 of 2

    • Selective-area high-quality germanium growth for monolithic integrated optoelectronics 

      Yu, H. Y.; Park, J. H.; Okyay, Ali Kemal; Saraswat, K. C. (Institute of Electrical and Electronics Engineers, 2012-03-02)
      Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth ...
    • Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction 

      Öztürk, M. K.; Hongbo, Y.; SarIkavak, B.; Korçak, S.; Özçelik, S.; Özbay, Ekmel (Springer, 2009-04-18)
      The important structural characteristics of hexagonal GaN in an InGaN/GaN multi quantum well, which was aimed to make a light emitted diode and was grown by metalorganic chemical vapor deposition on c-plain sapphire, are ...