Now showing items 1-2 of 2

    • Demonstration of flexible thin film transistors with GaN channels 

      Bolat, S.; Sisman, Z.; Okyay, A., K. (American Institute of Physics Inc., 2016)
      We report on the thin film transistors (TFTs) with Gallium Nitride (GaN) channels directly fabricated on flexible substrates. GaN thin films are grown by hollow cathode plasma assisted atomic layer deposition (HCPA-ALD) ...
    • Thin-film ZnO charge-trapping memory cell grown in a single ALD step 

      Oruc, F. B.; Cimen, F.; Rizk, A.; Ghaffari, M.; Nayfeh, A.; Okyay, A., K. (Institute of Electrical and Electronics Engineers, 2012-10-26)
      A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first ...