Browsing by Keywords "Thin film transistors"
Now showing items 1-11 of 11
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Atomic Layer Deposition for Vertically Integrated ZnO Thin Film Transistors: Toward 3D High Packing Density Thin Film Electronics
(Wiley-VCH Verlag, 2017)We report on the first demonstration of the atomic layer deposition (ALD) based three dimensional (3D) integrated ZnO thin film transistors (TFTs) on rigid substrates. Devices exhibit high on-off ratio (∼106) and high ... -
Demonstration of flexible thin film transistors with GaN channels
(American Institute of Physics Inc., 2016)We report on the thin film transistors (TFTs) with Gallium Nitride (GaN) channels directly fabricated on flexible substrates. GaN thin films are grown by hollow cathode plasma assisted atomic layer deposition (HCPA-ALD) ... -
Experimental and theoretical studies of transport through large scale, partially aligned arrays of single-walled carbon nanotubes in thin film type transistors
(2007)Gate-modulated transport through partially aligned films of single-walled carbon nanotubes (SWNTs) in thin film type transistor structures are studied experimentally and theoretically. Measurements are reported on SWNTs ... -
Gate bias characterization of CNT-TFT DNA sensors
(IEEE, 2009-12)This paper follows the approach in the works of Gui et al. (2007), that use the change in the current of carbon nanotube thin film transistors (CNT-TFT) with DNA attachment and DNA hybridization. The authors have studied ... -
Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures
(IEEE, 2015)Hollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our efforts on the development of ... -
Low temperature atomic layer deposited ZnO photo thin film transistors
(AVS Science and Technology Society, 2014)ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250°C. Material characteristics ... -
Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
(Wiley - V C H Verlag GmbH & Co. KGaA, 2015)Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current ... -
Operation of carbon nanotube thin-film transistors at elevated temperatures
(IEEE, 2009-12)The authors study the operation of carbon nanotube thin-film transistors (CNT-TFT) at elevated temperatures. Due to the small bandgap of semiconducting carbon nanotubes, CNT-TFTs are not suitable to be developed as ... -
Thin-film ZnO charge-trapping memory cell grown in a single ALD step
(Institute of Electrical and Electronics Engineers, 2012-10-26)A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first ... -
TiO2 thin film transistor by atomic layer deposition
(SPIE, 2013)In this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that asdeposited ALD TiO 2 films are amorphous and not suitable as TFT channel material. In order to use the film ... -
ZnO based optical modulator in the visible wavelengths
(SPIE, 2013)In order to demonstrate tunable absorption characteristics of ZnO, photodetection properties of ZnO based thin-film transistors are investigated. By controlling the occupancy of the trap states, the optical absorption ...
