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    • Thin-film ZnO charge-trapping memory cell grown in a single ALD step 

      Oruc, F. B.; Cimen, F.; Rizk, A.; Ghaffari, M.; Nayfeh, A.; Okyay, A., K. (Institute of Electrical and Electronics Engineers, 2012-10-26)
      A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first ...