Browsing by Keywords "Temperature dependence"
Now showing items 1-17 of 17
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Anharmonic line shift and linewidth of the Raman modes in TlInS2 layered crystals
(John Wiley & Sons Ltd., 2004)The temperature dependence of the unpolarized Raman spectra from TlInS 2 layered crystal was measured between 10 and 300 K. The analysis of the experimental data showed that the temperature dependences of wavenumbers and ... -
Current-Transport mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures
(Elsevier, 2013)Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport ... -
Density profile of a Bose-Einstein condensate inside a pancake-shaped trap: Observational consequences of the dimensional cross-over in the scattering properties
(Elsevier Science B.V., 2002)It is theoretically well known that two-dimensionality of the scattering events in a Bose-Einstein condensate introduces a logarithmic dependence on density in the coupling constant entering a mean-field theory of the ... -
Determination of trace element levels in human scalp hair in occupationally exposed subjects by XRF
(Akademiai Kiado Rt., 2001)Trace element levels in hair of individuals living in urban areas were determined by energy dispersive XRF. Two groups of subjects were investigated, the first group was assumed to be from a healthy environment, the other ... -
Drag effect in double-layer dipolar fermi gases
(Institute of Physics Publishing, 2014)We consider two parallel layers of two-dimensional spin-polarized dipolar Fermi gas without any tunneling between the layers. The effective interactions describing screening and correlation effects between the dipoles in ... -
Effective mass of electron in monolayer graphene: Electron-phonon interaction
(AIP Publishing LLC, 2013-01-25)Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m -1 and magnetic fields up to 11 T, have been used to investigate the electronic ... -
Electrical conduction properties of Si δ-doped GaAs grown by MBE
(2009)The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at ... -
Electrical performance of InAs/AlSb/GaSb superlattice photodetectors
(Academic Press, 2016)Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification ... -
Forward tunneling current in Pt/p-InGaN and Pt/n-InGaN Schottky barriers in a wide temperature range
(Elsevier, 2012-07-27)The current-transport mechanisms of the Pt contacts on p-InGaN and n-InGaN were investigated in a wide temperature range (80-360 K) and in the forward bias regime. It was found that the ideality factor (n) values and ... -
Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures
(Elsevier, 2010)The dielectric properties and AC electrical conductivity (σ ac)of the (Ni/Au)/Al 0.22Ga 0.78N/AlN/GaN heterostructures, with and without the SiNx passivation, have been investigated by capacitance-voltage and conductance-voltage ... -
The profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures
(Elsevier BV, 2008-11)The temperature dependence of capacitance–voltage (C–V) and the conductance–voltage (G/w–V) characteristics of (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures were investigated by considering the effect of series resistance ... -
Quantum effects of thermal conductance through atomic chains
(2001)We present a formalism for an atomic scale study of phononic heat transfer. The expression of thermal energy current can be cast in the Landauer form and incorporates the transmission coefficient explicitly. Calculation ... -
Reduced density matrix approach to phononic dissipation in friction
(2000)Understanding mechanisms for energy dissipation from nanoparticles in contact with large samples is a central problem in describing friction microscopically. Calculation of the reduced density matrix appears to be the most ... -
The substrate temperature dependent electrical properties of titanium dioxide thin films
(2010)Titanium dioxide thin films were obtained by a dc sputtering technique onto heated glass substrates. The relationship between the substrate temperature and the electrical properties of the films was investigated. Electrical ... -
Temperature dependence of the energy of a vortex in a two-dimensional Bose gas
(Elsevier, 2004)We evaluate the thermodynamic critical angular velocity Ωc(T) for creation of a vortex of lowest quantized angular momentum in a strictly two-dimensional Bose gas at temperature T, using a mean-field two-fluid model for ... -
Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
(2012)The two-dimensional (2D) electron energy relaxation in Al 0.25Ga 0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. ... -
Thermodynamic parameters of Cs+ sorption on natural clays
(Akademiai Kiado Rt., 2002)The sorption behavior of Cs+ on kaolinite, chlorite-illite, and bentonite clays as a function of time, cation concentration, and temperature was studied using the radiotracer method. Sorption data were well represented by ...
