Now showing items 1-18 of 18

    • Atomic layer deposited Al 2O 3 passivation of type II InAs/GaSb superlattice photodetectors 

      Salihoğlu, Ömer; Muti, Abdullah; Kutluer, Kutlu; Tansel, T.; Turan, R.; Kocabaş, Coşkun; Aydınlı, Atilla (AIP, 2012)
      Taking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al 2O 3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single ...
    • Detecting squeezed phonons through an indirect radiative transition 

      MÜstecaplioglu, Ö. E.; Shumovsky, A. S. (A I P Publishing LLC, 1997-04-27)
      A model of the effect of the longitudinal optical phonon number distribution on the Rabi oscillations of the photons involved in the associated indirect transition in a semiconductor is presented. It is shown that a faster ...
    • Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes 

      Tansel, T.; Kutluer, K.; Salihoglu, Ö.; Aydınlı, Atilla; Aslan, B.; Arikan, B.; Kilinc, M. C.; Ergun, Y.; Serincan, U.; Turan, R. (IEEE, 2012)
      The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ...
    • Electrical performance of InAs/AlSb/GaSb superlattice photodetectors 

      Tansel, T.; Hostut M.; Elagoz, S.; Kilic A.; Ergun, Y.; Aydınlı, Atilla (Academic Press, 2016)
      Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification ...
    • Electronic and optical properties of 4.2 μm"N" structured superlattice MWIR photodetectors 

      Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydınlı, Atilla (Elsevier, 2013)
      We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier ...
    • Electronic structure of Ge-Si superlattices grown on Ge (001) 

      Gulseren O.; Çıracı, Salim (1991)
      The authors have studied the electronic energy structure of pseudomorphic Gem/Sin superlattices by using the empirical tight-binding method. Effects of the band offset, sublattice periodicity and the lateral lattice constant ...
    • High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers 

      Ergun, Y.; Hostut, M.; Tansel, T.; Muti, bdullah; Kilic, A.; Turan, R.; Aydınlı, Atilla (SPIE, 2013)
      We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave ...
    • Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared 

      Tansel, T.; Kutluer, K.; Muti, Abdullah; Salihoğlu, Ömer; Aydınlı, Atilla; Turan, R. (SPIE, 2013)
      We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid- Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise ...
    • Many-body properties of a disordered charged Bose gas superlattice 

      Tanatar, Bilal; Das, A. K. (Academic Press, 2000)
      We study some many-body properties of a disordered charged Bose gas (CBG) superlattice-an infinite array of CBG layers each of which containing disorder. The latter is assumed to cause collisions with the charged bosons, ...
    • N-structure based on InAs/AlSb/GaSb superlattice photodetectors 

      Hostut, M.; Alyoruk, M.; Tansel, T.; Kilic, A.; Turan, R.; Aydınlı, Atilla; Ergun, Y. (Academic Press, 2015)
      We have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies ...
    • Plasma modes in layered superconductors 

      Askerzade, I. N.; Tanatar, Bilal (Elsevier B.V., 2005)
      An expression for the plasmon spectrum in the layered superconductors with arbitrary thickness of planes, which varies within a wide range is obtained. The obtained result can be attractive for the explanation of experimental ...
    • Quantum dots on vertically aligned gold nanorod monolayer: plasmon enhanced fluorescence 

      Peng, B.; Li, Z.; Mutlugun, E.; Martinez, P. L. H.; Li, D.; Zhang, Q.; Gao, Y.; Demir, Hilmi Volkan; Xiong, Q. (Royal Society of Chemistry, 2014)
      CTAB-coated Au nanorods were directly self-assembled into a vertically aligned monolayer with highly uniform hot spots through a simple but robust approach. By coupling with CdSe/ZnS quantum dots, a maximum enhancement of ...
    • Size controlled germanium nanocrystals in dielectrics : structural and optical analysis and stress evolution 

      Bahariqushchi, Rahim (Bilkent University, 2017-09)
      Group IV semiconductor nanocrystals, namely silicon and germanium have attracted much interest in the past two decades due to their broad applications in photovoltaic, memory, optoelectronic, medical imaging and ...
    • Spin confinement in the superlattices of graphene ribbons 

      Topsakal, M.; Sevinçli, H.; Çıracı, Salim (AIP Publishing, 2008)
      Based on first-principles calculations, we showed that repeated heterostructures of zigzag graphene nanoribbons of different widths form multiple quantum well structures. Edge states of specific spin directions can be ...
    • Stress evolution of Ge nanocrystals in dielectric matrices 

      Bahariqushchi, R.; Raciti, R.; Kasapoǧlu, A. E.; Gür, E.; Sezen, M.; Kalay, E.; Mirabella, S.; Aydınlı, Atilla (Institute of Physics Publishing, 2018)
      Germanium nanocrystals (Ge NCs) embedded in single and multilayer silicon oxide and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor deposition followed by conventional furnace annealing ...
    • Surface recombination noise in InAs / GaSb superlattice photodiodes 

      Tansel, T.; Kutluer, K.; Muti, A.; Salihoglu, Ö.; Aydınlı, Atilla; Turan, R. (IOP Institute of Physics Publishing, 2013)
      The standard Schottky noise approach alone is not sufficient to describe the noise mechanism in an InAs/GaSb superlattice photodetector at reverse negative bias. The additional noise identified appears at surface activation ...
    • Theoretical investigation of InAs/GaSb type-II pin superlattice infrared detector in the mid wavelength infrared range 

      Kaya, U.; Hostut, M.; Kilic, A.; Sakiroglu, S.; Sokmen I.; Ergun, Y.; Aydınlı, Atilla (2013)
      In this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n detector. Kronig-Penney and envelope function approximation is used to calculate band gap energy and superlattice minibands. ...
    • Thiol passivation of MWIR Type II superlattice photodetectors 

      Salihoğlu, Ömer; Muti, Abdullah; Aydınlı, Atilla (SPIE, 2013)
      Poor passivation on photodetectors can result in catastrophic failure of the device. Abrupt termination of mesa side walls during pixel definition generates dangling bonds that lead to inversion layers and surface traps ...