Now showing items 1-20 of 22

    • Atomic layer deposited Al 2O 3 passivation of type II InAs/GaSb superlattice photodetectors 

      Salihoglu O.; Muti, A.; Kutluer, K.; Tansel, T.; Turan, R.; Kocabas, C.; Aydinli, A. (2012)
      Taking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al 2O 3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single ...
    • Detecting squeezed phonons through an indirect radiative transition 

      MÜstecaplioglu, Ö. E.; Shumovsky, A. S. (A I P Publishing LLC, 1997-04-27)
      A model of the effect of the longitudinal optical phonon number distribution on the Rabi oscillations of the photons involved in the associated indirect transition in a semiconductor is presented. It is shown that a faster ...
    • Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes 

      Tansel, T.; Kutluer, K.; Salihoglu, Ö.; Aydinli, A.; Aslan, B.; Arikan, B.; Kilinc, M. C.; Ergun, Y.; Serincan, U.; Turan, R. (IEEE, 2012)
      The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ...
    • Electrical performance of InAs/AlSb/GaSb superlattice photodetectors 

      Tansel, T.; Hostut M.; Elagoz, S.; Kilic A.; Ergun, Y.; Aydinli, A. (Academic Press, 2016)
      Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification ...
    • Electronic and optical properties of 4.2 μm"N" structured superlattice MWIR photodetectors 

      Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydinli, A. (Elsevier, 2013)
      We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier ...
    • Electronic structure of Ge-Si superlattices grown on Ge (001) 

      Gulseren O.; Ciraci S. (1991)
      The authors have studied the electronic energy structure of pseudomorphic Gem/Sin superlattices by using the empirical tight-binding method. Effects of the band offset, sublattice periodicity and the lateral lattice constant ...
    • Gibbs free energy assisted passivation layers 

      Salihoglu, O.; Tansel T.; Hostut M.; Ergun Y.; Aydinli A. (SPIE, 2016)
      Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical ...
    • High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers 

      Ergun, Y.; Hostut, M.; Tansel, T.; Muti, A.; Kilic, A.; Turan, R.; Aydinli, A. (2013)
      We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave ...
    • Low dark current N structure superlattice MWIR photodetectors 

      Salihoglu, O.; Muti, A.; Turan, R.; Ergun, Y.; Aydinli, A. (SPIE, 2014)
      Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R0A) which is directly related to dark current of the detector. Dark current arises ...
    • Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared 

      Tansel, T.; Kutluer, K.; Muti, A.; Salihoglu O.; Aydinli, A.; Turan, R. (2013)
      We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid- Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise ...
    • Magnetic polaritons, magnetostatic waves and effective-medium approximation for antiferromagnetic superlattice with impurity in parallel magnetic field 

      Tagiyeva, R. T.; Tanatar, B. (2012)
      We derive the general effective-medium expression for the surface-guided magnetic polaritons and magnetostatic waves, which propagate in the antiferromagnetic superlattice with antiferromagnetic impurity film, and investigate ...
    • Many-body properties of a disordered charged Bose gas superlattice 

      Tanatar, B.; Das, A. K. (Academic Press, 2000)
      We study some many-body properties of a disordered charged Bose gas (CBG) superlattice-an infinite array of CBG layers each of which containing disorder. The latter is assumed to cause collisions with the charged bosons, ...
    • N-structure based on InAs/AlSb/GaSb superlattice photodetectors 

      Hostut, M.; Alyoruk, M.; Tansel, T.; Kilic, A.; Turan, R.; Aydinli, A.; Ergun, Y. (Academic Press, 2015)
      We have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies ...
    • Plasma modes in layered superconductors 

      Askerzade, I. N.; Tanatar, B. (Elsevier B.V., 2005)
      An expression for the plasmon spectrum in the layered superconductors with arbitrary thickness of planes, which varies within a wide range is obtained. The obtained result can be attractive for the explanation of experimental ...
    • Quantum dots on vertically aligned gold nanorod monolayer: plasmon enhanced fluorescence 

      Peng, B.; Li, Z.; Mutlugun, E.; Martinez, P. L. H.; Li, D.; Zhang, Q.; Gao, Y.; Demir, H. V.; Xiong, Q. (Royal Society of Chemistry, 2014)
      CTAB-coated Au nanorods were directly self-assembled into a vertically aligned monolayer with highly uniform hot spots through a simple but robust approach. By coupling with CdSe/ZnS quantum dots, a maximum enhancement of ...
    • SbSI based photonic crystal superlattices: Band structure and optics 

      Simsek, S.; Koc H.; Palaz, S.; Oltulu O.; Mamedov, A.M.; Ozbay, E. (Institute of Physics Publishing, 2015)
      In this work, we present an investigation of the optical properties and band structure calculations for the photonic crystal structures (PCs) based on one-dimensional (1D)-photonic crystal. Here we use 1D SbSI based layers ...
    • Size controlled germanium nanocrystals in dielectrics : structural and optical analysis and stress evolution 

      Bahariqushchi, Rahim (Bilkent University, 2017-09)
      Group IV semiconductor nanocrystals, namely silicon and germanium have attracted much interest in the past two decades due to their broad applications in photovoltaic, memory, optoelectronic, medical imaging and ...
    • Spin confinement in the superlattices of graphene ribbons 

      Topsakal, M.; Sevinçli, H.; Ciraci, S. (AIP Publishing, 2008)
      Based on first-principles calculations, we showed that repeated heterostructures of zigzag graphene nanoribbons of different widths form multiple quantum well structures. Edge states of specific spin directions can be ...
    • Stress evolution of Ge nanocrystals in dielectric matrices 

      Bahariqushchi, R.; Raciti, R.; Kasapoǧlu, A. E.; Gür, E.; Sezen, M.; Kalay, E.; Mirabella, S.; Aydinli, A. (Institute of Physics Publishing, 2018)
      Germanium nanocrystals (Ge NCs) embedded in single and multilayer silicon oxide and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor deposition followed by conventional furnace annealing ...
    • Surface recombination noise in InAs / GaSb superlattice photodiodes 

      Tansel, T.; Kutluer, K.; Muti, A.; Salihoglu, Ö.; Aydinli, A.; Turan, R. (IOP Institute of Physics Publishing, 2013)
      The standard Schottky noise approach alone is not sufficient to describe the noise mechanism in an InAs/GaSb superlattice photodetector at reverse negative bias. The additional noise identified appears at surface activation ...