Now showing items 1-8 of 8

    • Electrical performance of InAs/AlSb/GaSb superlattice photodetectors 

      Tansel, T.; Hostut M.; Elagoz, S.; Kilic A.; Ergun, Y.; Aydinli, A. (Academic Press, 2016)
      Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification ...
    • Electronic and optical properties of 4.2 lm‘‘N’’ structured superlattice MWIR photodetectors 

      Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydinli, A. (Elsevier B.V., 2013-01-05)
      We report on the development of a new structure for type II superlattice photodiodes that we call the ‘‘N’’ design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The ...
    • Electronic and optical properties of 4.2 μm"N" structured superlattice MWIR photodetectors 

      Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydinli, A. (Elsevier, 2013)
      We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier ...
    • Electronic structure of low dimensional semiconductor systems 

      Gulseren, Oguz (Bilkent University, 1992)
      Recent progress made in the growth techniques has led to the fabrication of the artificial semiconductor systems of lower dimension. Electrons and holes in these materials have quantization different from those of the ...
    • Gibbs free energy assisted passivation layers 

      Salihoglu, O.; Tansel T.; Hostut M.; Ergun Y.; Aydinli A. (SPIE, 2016)
      Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical ...
    • Low dark current N structure superlattice MWIR photodetectors 

      Salihoglu, O.; Muti, A.; Turan, R.; Ergun, Y.; Aydinli, A. (SPIE, 2014)
      Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R0A) which is directly related to dark current of the detector. Dark current arises ...
    • Passivation of type II InAs / GaSb superlattice photodetectors with atomic layer deposited Al2O3 

      Salihoğlu, Ömer; Muti, Abdullah; Kutluer, K.; Tansel, T.; Turan, R.; Kocabaş, Coşkun; Aydınlı, Atilla (SPIE, 2012)
      We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free ...
    • Thiol passivation of MWIR Type II superlattice photodetectors 

      Salihoğlu, Ömer; Muti, Abdullah; Aydınlı, Atilla (SPIE, 2013)
      Poor passivation on photodetectors can result in catastrophic failure of the device. Abrupt termination of mesa side walls during pixel definition generates dangling bonds that lead to inversion layers and surface traps ...