Now showing items 1-3 of 3

    • Low temperature atomic layer deposited ZnO photo thin film transistors 

      Oruc, F. B.; Aygun, L. E.; Donmez, I.; Biyikli, N.; Okyay, A., K.; Yu, H. Y. (AVS Science and Technology Society, 2014)
      ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250°C. Material characteristics ...
    • Thin-film ZnO charge-trapping memory cell grown in a single ALD step 

      Oruc, F. B.; Cimen, F.; Rizk, A.; Ghaffari, M.; Nayfeh, A.; Okyay, A., K. (Institute of Electrical and Electronics Engineers, 2012-10-26)
      A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first ...
    • TiO2 thin film transistor by atomic layer deposition 

      Okyay, Ali K.; Oruç, Feyza B.; Çimen, Furkan; Aygün, Levent E. (SPIE, 2013)
      In this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that asdeposited ALD TiO 2 films are amorphous and not suitable as TFT channel material. In order to use the film ...