Now showing items 1-8 of 8

    • AlGaN quadruple-band photodetectors 

      Gökkavas, M.; Butun, S.; Caban P.; Strupinski W.; Ozbay, E. (2009)
      Quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated. The average of the full-width at half-maximum (FWHM) of the quantum efficiency ...
    • High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current 

      Tut, T.; Biyikli, N.; Kimukin, I.; Kartaloglu, T.; Aytur, O.; Unlu, M. S.; Ozbay, E. (Pergamon Press, 2005-01)
      Al0.38Ga0.62N/GaN heterojunction solar-blind Schottky photodetectors with low dark current, high responsivity, and fast pulse response were demonstrated. A five-step microwave compatible fabrication process was utilized ...
    • High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts 

      Biyikli, N.; Kimukin, I.; Kartaloglu, T.; Aytur, O.; Ozbay, E. (American Institute of Physics, 2003)
      AlGaN/GaN-based high-speed solar-blind photodetectors were discussed. Current-voltage, spectral responsivity, and high-frequency response characterizations were performed. Breakdown voltages larger than 40 V were obtained. ...
    • Integrated AlGaN quadruple-band ultraviolet photodetectors 

      Gökkavas, M.; Butun, S.; Caban, P.; Strupinski, W.; Ozbay, E. (IOP Publishing, 2012-04-27)
      Monolithically integrated quadruple back-illuminated ultraviolet metalsemiconductormetal photodetectors with four different spectral responsivity bands were demonstrated on each of two different Al xGa 1-xN heterostructures. ...
    • LSPR enhanced MSM UV photodetectors 

      Butun, S.; Cinel, N. A.; Ozbay, E. (IOP Publishing, 2012-10-18)
      We fabricated localized surface plasmon resonance enhanced UV photodetectors on MOCVD grown semi-insulating GaN. Plasmonic resonance in the UV region was attained using 36nm diameter Al nanoparticles. Extinction spectra ...
    • Photovoltaic nanocrystal scintillators hybridized on Si solar cells for enhanced conversion efficiency in UV 

      Mutlugun, E.; Soganci I.M.; Demir, H. V. (Optical Society of American (OSA), 2008)
      We propose and demonstrate semiconductor nanocrystal based photovoltaic scintillators integrated on solar cells to enhance photovoltaic device parameters including spectral responsivity, open circuit voltage, short circuit ...
    • Silicon-Germanium multi-quantum well photodetectors in the near infrared 

      Onaran, E.; Onbasli, M. C.; Yesilyurt, A.; Yu, H. Y.; Nayfeh, A. M.; Okyay, A., K. (Optical Society of American (OSA), 2012)
      Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. ...
    • Solar-blind A1GaN-based p-i-n photodiodes with low dark current and high detectivity 

      Biyikli, N.; Kimukin, I.; Aytur, O.; Ozbay, E. (IEEE, 2004)
      We report solar-blind AlxGal1-xN-based heterojunction p-i-n photodiodes with low dark current and high detectivity. After the p+ GaN cap layer was recess etched, measured dark current was below 3 fA for reverse bias values ...