Now showing items 1-3 of 3

    • Design of high power S-band GaN MMIC power amplifiers for WiMAX applications 

      Cengiz, Ömer; Kelekçi, Özgür; Arıkan, Galip Orkun; Özbay, Ekmel; Palamutçuoǧullari O. (IEEE, 2011)
      This paper reports two different S band GaN MMIC PA designs for WiMAX applications. First PA has a 42.6 dBm output power with a 55%PAE @ 3.5 GHz and 16 dB small signal gain in the 3.2-3.8 GHz frequency range. When two of ...
    • Design of multi-octave band GaN-HEMT power amplifier 

      Eren, Gulesin; Şen, Özlem A.; Bölükbaş, Basar; Kurt, Gökhan; Arıcan, Orkun; Cengiz, Ömer; Ünal, Sıla T.K.; Durmuş, Yıldırım; Özbay, Ekmel (IEEE, 2012)
      This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride ...
    • High power K-band GaN on SiC CPW monolithic power amplifier 

      Cengiz O.; Sen O.; Ozbay, E. (Institute of Electrical and Electronics Engineers Inc., 2014)
      This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain ...