Browsing by Keywords "Single crystals"
Now showing items 1-20 of 33
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Angular dependence of upper critical field in two-band Ginzburg-Landau theory
(Elsevier B.V., 2007)Generalization of two-band Ginzburg-Landau (GL) theory to the case of anisotropic mass is presented. The temperature dependence of the anisotropy parameter of upper critical field γc 2 (T) = Hc 2∥ (T) / Hc 2⊥ (T) and angular ... -
Anharmonicity in GaTe layered crystals
(Wiley-VCH Verlag GmbH & Co. KGaA, 2002)The temperature dependencies (10-300 K) of seven Raman-active mode frequencies in layered semiconductor gallium telluride have been measured in the frequency range from 25 to 300 cm -1. Softening and broadening of the ... -
Anharmonicity of zone-center optical phonons: Raman scattering spectra of GaSe0.5S0.5 layered crystal
(IOPscience, 2002)The temperature dependencies (10-300 K) of the eight Raman-active mode frequencies and linewidths in GaSe0.5S0.5 layered crystal have been measured in the frequency range from 10 to 320 cm-1. We observed softening and ... -
Bean-Livingston surface barriers for flux penetration in Bi 2Sr 2CaCu 2O 8+δ single crystals near the transition temperature
(2011)The first field for magnetic flux penetration H p in Bi 2Sr 2CaCu 2O 8+δ (Bi-2212) single crystals near the critical temperature T c was investigated from the local magnetic hysteresis loops registered for different magnetic ... -
Coupled-cavity structures in photonic crystals
(Materials Research Society, 2002)We investigate the localized coupled-cavity modes in two-dimensional dielectric photonic crystals. The transmission, phase, and delay time characteristics of the various coupled-cavity structures are measured and calculated. ... -
Defect luminescence in undoped p-type GaSe
(Taylor & Francis, 2001)Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide ... -
Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity
(Pergamon Press, 1998)The emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band ... -
Femtosecond self-doubling optical parametric oscillator based on KTiOAsO4
(IEEE, 2003)We report a femtosecond intracavity-frequency-doubled optical parametric oscillator that employs a single KTiOAsO4 crystal for both parametric generation and frequency doubling. This device generates a yellow output beam ... -
High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration
(IEEE, 2009)We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) ... -
Infrared photoluminescence from TlGaS2 layered single crystals
(Wiley - V C H Verlag GmbH & Co., 2004)Photolimuniscence (PL) spectra of TlGaS2 layered crystals were studied in the wavelength region 500-1400 nm and in the temperature range 15-115 K. We observed three broad bands centered at 568 nm (A-band), 718 nm (B-band) ... -
Lattice dynamics and elastic properties of lanthanum monopnictides
(2008)In this study, first principles calculation results of the second order elastic constants and lattice dynamics of two lanthanum monopnictides, LaN and LaBi, which crystallize in rock-salt structure (B1 phase), are presented. ... -
Low-temperature photoluminescence spectra of layered semiconductor TlGaS2
(Pergamon Press, 1998)Photoluminescence (PL) spectra of TlGaS2 layered single crystals were studied in the wavelength region 500-860 nm and in the temperature range 9.5-293 K. We observed a total of three PL bands centered at 568 nm (2.183 eV, ... -
Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals
(Elsevier Science, 2001)Photoluminescence (PL) spectra of GaS0.5Se0.5 layered single crystals have been studied in the wavelength range of 565-860 nm and in the temperature range of 15-170 K. Two PL bands centered at 585 nm (2.120 eV) and 640 nm ... -
Low-temperature visible photoluminescence spectra of TlGaSe2 layered crystal
(Elsevier Science Publishers B.V., Amsterdam, Netherlands, 2000)The photoluminescence (PL) spectra of TlGaSe2 layered single crystals were investigated in the 8.5-35 K temperature. 0.2-15.2 W cm-2 excitation laser intensity, and in the 600-700 nm wavelength range. The PL spectrum has ... -
Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel
(IOP Publishing, 2010-03-16)The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it is expected ... -
Nanosecond sum-frequency generating optical parametric oscillator using simultaneous phase matching
(Optical Society of American (OSA), 2005)We report a nanosecond sum-frequency generating optical parametric oscillator based on a single KTiOAsO4 crystal that is simultaneously phase matched for optical parametric generation and sum-frequency generation. Pumped ... -
One-dimensional copper (II) coordination polymer as an electrocatalyst for water oxidation
(Wiley-VCH Verlag, 2017)Although cobalt-based heterogeneous catalysts are the central focus in water oxidation research, interest in copper-based water oxidation catalysts has been growing thanks the great abundance of copper and its biological ... -
Phase-matched self-doubling optical parametric oscillator
(IEEE, 1996)A new self-doubling optical parametric oscillator (OPO) uses a single nonlinear crystal for both parametric generation and frequency doubling. It is based on a KTiOPO4 (KTP) crystal pumped by a Ti:Sapphire laser operating ... -
Phonon-assisted nonradiative energy transfer from colloidal quantum dots to monocrystalline bulk silicon
(IEEE, 2012)Silicon is one of the most dominant materials in photovoltaics. To increase optical absorption of silicon solar cells, colloidal quantum dots (QDs) have been proposed as a good sensitizer candidate owing to their favorably ... -
Plane-wave theory of self-doubling optical parametric oscillators
(Institute of Electrical and Electronics Engineers, 1998-03)This paper presents a theoretical analysis of self-doubling optical parametric oscillators (OPO's) where a single nonlinear crystal is used for both parametric generation and frequency doubling. In these devices, the ...
