Now showing items 1-16 of 16

    • 2-nm laser-synthesized Si nanoparticles for low-power charge trapping memory devices 

      El-Atab, N.; Ozcan, A.; Alkis, S.; Okyay, A., K.; Nayfeh, A. (Institute of Electrical and Electronics Engineers Inc., 2014)
      In this work, the effect of embedding Silicon Nanoparticles (Si-NPs) in ZnO based charge trapping memory devices is studied. Si-NPs are fabricated by laser ablation of a silicon wafer in deionized water followed by sonication ...
    • Chemical and topographical modification of PHBV surface to promote osteoblast alignment and confinement 

      Kenar, H.; Kocabas, A.; Aydinli, A.; Hasirci, V. (John Wiley & Sons, Inc., 2008)
      Proper cell attachment and distribution, and thus stronger association in vivo between a bone implant and native tissue will improve the success of the implant. In this study, the aim was to achieve promotion of attachment ...
    • Design and implementation of capacitive micromachined ultrasonic transducers for high power 

      Yamaner F.Y.; Olcum, S.; Bozkurt, A.; Köymen H.; Atalar, Abdullah (2011)
      Capacitive micromachined ultrasonic transducers (CMUTs) have a strong potential to compete piezoelectric transducers in high power applications. In a CMUT, obtaining high port pressure competes with high particle velocity: ...
    • The effect of anions of transition metal salts on the structure of modified mesostructured silica films and monoliths 

      Demirörs, A. F.; Arslan, M.; Dag, Ö. (Elsevier, 2007)
      The structure of the preformed LC mesophase of water:transition metal salt ([M(H2O)6]X2):acid (HX):oligo(ethylene oxide) (or Pluronics):tetramethylorthosilicate (TMOS) mixture during hydrolysis and partial polymerization ...
    • The effects of surface treatment on optical and vibrational properties of stain-etched silicon 

      Kalem, Ş.; Göbelek, D.; Kurtar, R.; Mısırlı, Z.; Aydınlı, A.; Ellialtioǧlu, R. (Pergamon Press, 1995)
      The effects of surface treatment on optical and vibrational properties of porous silicon. (por-Si) layers grown on p-type Si wafers by electroless etching technique were studied by FTIR spectroscopy and photoluminescence ...
    • Electrical characteristics of β-Ga2O3 thin films grown by PEALD 

      Altuntas, H.; Donmez, I.; Ozgit Akgun, C.; Biyikli, N. (Elsevier, 2014)
      In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O 3 thin films were annealed ...
    • High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration 

      Yu H.-Y.; Kobayashi, M.; Jung W.S.; Okyay, A., K.; Nishi, Y.; Saraswat, K.C. (2009)
      We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) ...
    • Highly doped silicon micromachined photonic crystals 

      Temelkuran, B.; Bayindir, M.; Ozbay, E.; Kavanaugh, J. P.; Sigalas, M. M.; Tuttle, G. (IEEE, Piscataway, NJ, United States, 2000)
      Summary form only given. Photonic crystals are periodic structures with the property of reflecting the electromagnetic (EM) waves in all directions within a certain frequency range. These structures can be used to control ...
    • Holograms deep inside Silicon 

      Makey G.; Tokel O.; Turnali A.; Pavlov I.; Elahi P.; Yavuz O.; Ömer Ilday F. (OSA - The Optical Society, 2016)
      Through the Nonlinear Laser Lithography method, we demonstrate the first computer generated holograms fabricated deep inside Silicon. Fourier and Fresnel holograms are fabricated buried inside Si wafers, and a generation ...
    • Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon 

      Hyung Nam J.; Alkis, S.; Nam, D.; Afshinmanesh F.; Shim J.; Park, J.; Brongersma, M.; Okyay, A., K.; Kamins, T.I.; Saraswat, K. (Elsevier, 2015)
      A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO2) is thermally grown and patterned to define growth window for germanium (Ge). ...
    • Methods for probing charging properties of polymeric materials using XPS 

      Sezen, H.; Ertas, G.; Suzer, S. (2010)
      Various thin polystyrene, PS, and poly(methyl methacrylate), PMMA and PS + PMMA blend films have been examined using the technique of recording X-ray photoelectron spectrum while the sample is subjected to ±10 V d.c. bias, ...
    • Practical multi-featured perfect absorber utilizing high conductivity silicon 

      Gok, A.; Yilmaz, M.; Bıyıklı, N.; Topallı, K.; Okyay, A., K. (Institute of Physics Publishing, 2016)
      We designed all-silicon, multi-featured band-selective perfect absorbing surfaces based on CMOS compatible processes. The center wavelength of the band-selective absorber can be varied between 2 and 22 μm while a bandwidth ...
    • Synthesis of ultra-small Si / Ge semiconductor nano-particles using electrochemistry 

      Alkis, S.; Ghaffari, M.; Okyay, A., K. (Elsevier, 2012)
      In this paper, we describe the formation of colloidal Si/Ge semiconductor nano-particles by electrochemical etching of Ge quantum dots (GEDOT), Silicon-Germanium graded layers (GRADE) and Silicon-Germanium multi-quantum ...
    • Theoretical limits of the multistacked 1-D and 2-D microstructured inorganic solar cells 

      Yengel, E.; Karaagac H.; Logeeswaran V.J.; Islam, M.S. (SPIE, 2015)
      Recent studies in monocrystalline semiconductor solar cells are focused on mechanically stacking multiple cells from different materials to increase the power conversion efficiency. Although, the results show promising ...
    • Ultra-low-cost near-infrared photodetectors on silicon 

      Nazirzadeh, M.A.; Atar F.B.; Turgut, B.B.; Okyay, A., K. (SPIE, 2015)
      We demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that ...
    • Wafer bonded capacitive micromachined underwater transducers 

      Olcum, S.; Oǧuz, K.; Şenlik, M.N.; Yamaner F.Y.; Bozkurt, A.; Atalar, Abdullah; Köymen H. (2009)
      In this work we have designed, fabricated and tested CMUTs as underwater transducers. Single CMUT membranes with three different radii and 380 microns of thickness are fabricated for the demonstration of an underwater CMUT ...