Now showing items 1-6 of 6

    • Effect of processing options on ultra-low-loss lead-magnesium-niobium titanate thin films for high density capacitors 

      Chen W.; McCarthy, K.G.; O'Brien, S.; Çopuroǧlu, Mehmet; Cai, M.; Winfield, R.; Mathewson, A. (Elsevier, 2013)
      This work studies the impact of annealing temperatures on PMNT (lead-magnesium niobate-lead titanate, Pb(Mg0.33Nb 0.67)0.65Ti0.35O3) thin films grown on a silicon substrate. The electrical properties of the thin films, ...
    • Electrical and chemical characterization of chemically passivated silicon surfaces 

      Chhabra, B.; Süzer, Şefik; Opila, R. L.; Honsberg, C. B. (IEEE, 2008)
      The surface composition of chemically passivated silicon substrates is investigated using XPS and FTIR techniques. The samples are passivated with methanol, quinhydrone-methanol and iodine-methanol solution after HF ...
    • Flexible metamaterials for wireless strain sensing 

      Melik, R.; Unal, E.; Perkgoz, N. K.; Puttlitz, C.; Demir, Hilmi Volkan (American Institute of Physics, 2009-11-04)
      We proposed and demonstrated flexible metamaterial-based wireless strain sensors that include arrays of split ring resonators (SRRs) to telemetrically measure strain. For these metamaterial sensors, we showed that a flexible ...
    • Response of polyelectrolyte layers to the SiO2 substrate charging as probed by XPS 

      Conger, C. P.; Suzer, S. (2009)
      A single layer of the Cationic polyelectrolyte poly(allyamine) hydrochloride (PAH) deposited, using the layer-by-layer technique, on a silicon substrate containing 5 nm oxide layer is investigated by XPS while applying an ...
    • Silicon-Germanium multi-quantum well photodetectors in the near infrared 

      Onaran, E.; Onbasli, M. C.; Yesilyurt, A.; Yu, H. Y.; Nayfeh, A. M.; Okyay, A., K. (Optical Society of American (OSA), 2012)
      Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. ...
    • Synthesis and size differentiation of Ge nanocrystals in amorphous SiO 2 

      Aǧan, S.; Çelik-Aktaş, A.; Zuo, J. M.; Dana, A.; Aydinli, A. (Springer, 2006)
      Germanosilicate layers were grown on Si substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed at different temperatures ranging from 700-1010 °C for durations of 5 to 60 min. Transmission electron ...