Browsing by Keywords "Silicon nitride"
Now showing items 1-12 of 12
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1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector
(IEEE, Piscataway, NJ, United States, 2000)GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect. -
Alteration of spontaneous emission in hydrogenated amorphous silicon nitride microcavities
(Elsevier BV, 1998)A Fabry-Perot microcavity is used for the alteration of the spontaneous emission spectrum in hydrogenated amorphous silicon nitride. The modified photon density of states of the Fabry-Perot microcavity are responsible for ... -
An analysis for the broad-band absorption enhancement using plasmonic structures on uncooled infrared detector pixels
(SPIE, 2012-05)This paper introduces an analysis on the absorption enhancement in uncooled infrared pixels using resonant plasmon modes in metal structures, and it reports, for the first time in literature, broad-band absorption enhancement ... -
Coupled optical microcavities in one-dimensional photonic bandgap structures
(Institute of Physics Publishing, 2001)We present a detailed theoretical and experimental study of the evanescent coupled optical microcavity modes in one-dimensional photonic bandgap structures. The coupled-cavity samples are fabricated by depositing alternating ... -
Differentiation of domains in composite surface structures by charge-contrast x-ray photoelectron spectroscopy
(2007)An external bias is applied to two samples containing composite surface structures, while recording an XPS spectrum. Altering the polarity of the bias affects the extent of differential charging in domains that are chemically ... -
The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AIN/GaN heterostructures
(Wiley, 2010)(Ni/Au)Alx Ga1-x N/AlN/GaN(x = 0.22) heterostructures with and without a passivation layer of the SiNx were fabricated in order to see the effect of the insulator layer on the main electrical parameters such as zero-bias ... -
Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures
(ELSEVIER, 2010)The forward and reverse bias I-V, C-V, and G/ω-V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22Ga 0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer ... -
Memristive behavior in a junctionless flash memory cell
(American Institute of Physics Inc., 2015)We report charge storage based memristive operation of a junctionless thin film flash memory cell when it is operated as a two terminal device by grounding the gate. Unlike memristors based on nanoionics, the presented ... -
Physics and applications of photonic crystals
(Nanotechnology Research Center NANOTAM, 2004)In this article, we investigate how the photonic band gaps and the variety of band dispersions of photonic crystals can be utilized for various applications and how they further give rise to completely novel optical ... -
Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures
(Wiley, 2001)We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating ... -
Strong enhancement of spontaneous emission in hydrogenated amorphous silicon nitride coupled-microcavity structures
(IEEE, 2001)The modification of spontaneous emission from the hydrogenated amorphous silicon nitride layers in a coupled-microcavity (CMC) structure was investigated. The CMC structure was composed of alternating silicon-oxide and ... -
Visible photoluminescence from low temperature deposited hydrogenated amorphous silicon nitride
(Pergamon Press, 1996)Hydrogenated amorphous silicon nitride (a-SiNx:H) samples have been prepared by plasma enhanced chemical vapor deposition (PECVD) using a mixture of silane (SiH4), nitrogen and ammonia (NH3). Most films exhibit visible ...
