Browsing by Keywords "Silicon"
Now showing items 1-20 of 98
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2-nm laser-synthesized Si nanoparticles for low-power charge trapping memory devices
(IEEE, 2014-08)In this work, the effect of embedding Silicon Nanoparticles (Si-NPs) in ZnO based charge trapping memory devices is studied. Si-NPs are fabricated by laser ablation of a silicon wafer in deionized water followed by sonication ... -
Ab initio study of hydrogenic effective mass impurities in Si nanowires
(Institute of Physics Publishing, 2017-01)The effect of B and P dopants on the band structure of Si nanowires is studied using electronic structure calculations based on density functional theory. At low concentrations a dispersionless band is formed, clearly ... -
Ab initio temperature dependent studies of the homoepitaxial growth on Si(0 0 1) surface
(2001)We performed ab initio zero temperature and finite temperature molecular dynamics calculations to investigate the homoepitaxial growth on the Si(0 0 1) surface. How do the deposited atoms (adatoms) form addimers and how ... -
Adsorption of group IV elements on graphene, silicene, germanene and stanene: dumbbell formation
(ACS Publications, 2014-12-09)Silicene and germanene derivatives constructed from periodic dumbbell units play a crucial role in multilayers of these honeycomb structures. Using first-principles calculations based on density functional theory, here ... -
Automated parallel high-speed atomic force microscopy
(A I P Publishing LLC, 1998-05-04)An expandable system has been developed to operate multiple probes for the atomic force microscope in parallel at high speeds. The combined improvements from parallelism and enhanced tip speed in this system represent an ... -
Broadband quarter-wave plates at near-infrared using high-contrast gratings
(2013)In this paper, we report the theoretical and experimental possibility of achieving a quarter-wave plate regime by using high-contrast gratings, which are binary, vertical, periodic, near-wavelength, and two-dimensional ... -
Charge Trapping Memory with 2.85-nm Si-Nanoparticles Embedded in HfO2
(Electrochemical Society Inc., 2015)In this work, the effect of embedding 2.85-nm Si-nanoparticles charge trapping layer in between double layers of high-κ Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> oxides is studied. Using high frequency (1 MHz) ... -
Chemical and topographical modification of PHBV surface to promote osteoblast alignment and confinement
(John Wiley & Sons, Inc., 2008)Proper cell attachment and distribution, and thus stronger association in vivo between a bone implant and native tissue will improve the success of the implant. In this study, the aim was to achieve promotion of attachment ... -
Chemically specific dynamic characterization of photovoltaic and photoconductivity effects of surface nanostructures
(American Chemical Society, 2010)We report characterization of photovoltaic and photoconductivity effects on nanostructured surfaces through light induced changes in the X-ray photoelectron spectra (XPS). The technique combines the chemical specificity ... -
Communication: Enhancement of dopant dependent x-ray photoelectron spectroscopy peak shifts of Si by surface photovoltage
(2011)Binding energies measured by x-ray photoelectron spectroscopy (XPS) are influenced by doping, since electrons are transferred to (p-type) and from (n-type) samples when they are introduced into the spectrometer, or brought ... -
Comparative study of thin film n-i-p a-Si: H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles
(Elsevier Ltd, 2015)In this paper, the effect of gold nanoparticles on n-i-p a-Si:H solar cells with different intrinsic layer (i-layer) thicknesses has been studied. 100nm and 500nm i-layer based n-i-p a-Si:H solar cells were fabricated and ... -
Comparison of fully three-dimensional optical, normally conducting, and superconducting interconnections
(Optical Society of America, 1999-12-10)Several approaches to three-dimensional integration of conventional electronic circuits have been pursued recently. To determine whether the advantages of optical interconnections are negated by these advances, we compare ... -
Compositional homogeneity in a medical-grade stainless steel sintered with a Mn-Si additive
(Elsevier, 2012-06-09)In this paper, chemical composition uniformity in amorphous/ nanocrystallization medical-grade stainless steel (ASTM ID: F2581) sintered with a Mn-Si additive was studied via scanning electron microscopy, energy dispersive ... -
Conversion of wooden structures into porous SiC with shape memory synthesis
(2011)Synthesis of structured silicon carbide materials can be accomplished using wooden materials as the carbon source, with various silicon impregnation techniques. We have explored the low cost synthesis of SiC by impregnation ... -
Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
(A I P Publishing LLC, 2015)Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200°C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the ... -
Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing
(2008)We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with S-ilicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). ... -
Design and implementation of capacitive micromachined ultrasonic transducers for high power
(2011)Capacitive micromachined ultrasonic transducers (CMUTs) have a strong potential to compete piezoelectric transducers in high power applications. In a CMUT, obtaining high port pressure competes with high particle velocity: ... -
Design and realization of a fully on-chip High-Q resonator at 15 GHz on silicon
(Institute of Electrical and Electronics Engineers, 2008-12)We develop and demonstrate an on-chip resonator working at 15 GHz with a high quality factor (Q-factor) of 93.81 while only requiring a small chip size of 195 mu m x 195 mu m on Si by using our new design methodology. In ... -
Design of all-silicon photonic and plasmonic perfect absorbers and their applications
(Bilkent University, 2016-06)Majority of the optoelectronic devices works either in infrared regime or in visible spectrum. Among these, perfect absorbers attracted great attention due to their high applicability in solar cells and high performance ... -
Differential charging in SiO2/Si systems as determined by XPS
(American Chemical Society, 2004)The Si2p binding and the SiKLL kinetic energy difference between the SiO2 layer and Si substrate is shown to be influence by application of external voltage bias to the sample holder due to the differential charging as was ...
