Now showing items 1-5 of 5

    • Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure 

      Lisesivdin, S. B.; Atmaca, G.; Arslan, E.; Çakmakyapan S.; Kazar, Ö.; Bütün, S.; Ul-Hassan, J.; Janzén, E.; Özbay, Ekmel (Elsevier BV, 2014-09)
      Hall effect measurements of a graphene-on-SiC system were carried out as a function of temperature (1.8-200 K) at a static magnetic field (0.51) With the analysis of temperature dependent single-field Hall data with the ...
    • GaN based LNA MMICs for X-band applications 

      Zafar, Salahuddin; Osmanoğlu, Sinan; Öztürk, Mustafa; Çankaya, Büşra; Yılmaz, Doğan; Kashif, A. U.; Özbay, Ekmel (Institute of Electrical and Electronics Engineers, 2020)
      In this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology for X-band applications. Two design topologies, a single-stage (LNA-1) and a two-stage (LNA-2), have been ...
    • GaN-on-SiC LNA for UHF and L-Band 

      Zafar, Salahuddin; Osmanoğlu, Sinan; Çankaya, Büşra; Kashif, A.; Özbay, Ekmel (IEEE, 2019)
      In this paper, we report a broadband GaN HEMT LNA from 100 MHz to 2 GHz, using common source with inductive degeneration and RC feedback topology. Flat gain response of ±1.5 dB variation for 9 V drain voltage with 108 mA ...
    • Synthesis, characterization, and wear and friction properties of variably structured SiC/Si elements made from wood by molten Si impregnation 

      Dhiman, R.; Rana, K.; Bengu, E.; Morgen P. (2012)
      We have synthesized pre-shaped SiC/Si ceramic material elements from charcoal (obtained from wood) by impregnation with molten silicon, which takes place in a two-stage process. In the first process, a porous structure of ...
    • Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier 

      Schwindt, R. S.; Kumar, V.; Aktaş, Ozan; Lee, J.-W.; Adesida, I. (IEEE, 2004-10)
      The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and ...