Now showing items 1-4 of 4

    • Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs 

      Celik O.; Tiras, E.; Ardali, S.; Lisesivdin, S.B.; Özbay, Ekmel (2011)
      Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained ...
    • Effective mass of electron in monolayer graphene: Electron-phonon interaction 

      Tiras, E.; Ardali, S.; Tiras, T.; Arslan, E.; Cakmakyapan, S.; Kazar, O.; Hassan, J.; Janzén, E.; Özbay, Ekmel (AIP Publishing LLC, 2013-01-25)
      Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m -1 and magnetic fields up to 11 T, have been used to investigate the electronic ...
    • Energy relaxation rates in AlInN/AlN/GaN heterostructures 

      Tiras, E.; Ardali, S.; Arslan, E.; Özbay, Ekmel (Springer, 2012-06-27)
      The two-dimensional (2D) electron energy relaxation in Al0.83In0.17N/AlN/GaN heterostructures has been investigated experimentally. Shubnikov-de Haas (SdH) effect measurements were employed in the investigations. The ...
    • Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures 

      Tiras, E.; Celik O.; Mutlu, S.; Ardali, S.; Lisesivdin, S.B.; Özbay, Ekmel (2012)
      The two-dimensional (2D) electron energy relaxation in Al 0.25Ga 0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. ...