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    • Nonradiative recombination-Critical in choosing quantum well number for InGaN/GaN light-emitting diodes 

      Zhang, Y.P.; Zhang, Z.-H.; Liu W.; Tan, S.T.; Ju, Z.G.; Zhang X.L.; Ji, Y.; Wang L.C.; Kyaw, Z.; Hasanov, N.; Zhu, B.B.; Lu, S.P.; Sun X.W.; Demir, Hilmi Volkan (Optical Society of American (OSA), 2015)
      In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased ...