Browsing by Keywords "Series resistance"
Now showing items 1-5 of 5
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The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AIN/GaN heterostructures
(Wiley, 2010)(Ni/Au)Alx Ga1-x N/AlN/GaN(x = 0.22) heterostructures with and without a passivation layer of the SiNx were fabricated in order to see the effect of the insulator layer on the main electrical parameters such as zero-bias ... -
On the interface states and series resistance profiles of (Ni/Au)-Al 0.22Ga0.78N/AlN/GaN heterostructures before and after 60Co (γ-ray) irradiation
(Taylor and Francis, 2010-06-09)The values of interface states (NSS) and series resistance (RS) of (Ni/Au)-Al0.22Ga0.78N/AlN/GaN heterostructures were obtained from admittance and current-voltage measurements before and after 250kGy 60Co irradiation. The ... -
The profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures
(Elsevier BV, 2008-11)The temperature dependence of capacitance–voltage (C–V) and the conductance–voltage (G/w–V) characteristics of (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures were investigated by considering the effect of series resistance ... -
Ta/Si Schottky diodes fabricated by magnetron sputtering technique
(2010)Electrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier ... -
Temperature-dependent profile of the surface states and series resistance in (Ni/Au)/AIGaN/AIN/GaN heterostructures
(Wiley, 2010-03-28)The profile of the interface state densities(N ss) and series resistances (R s) effect on capacitance-voltage (C-V) and conductancevoltage (G/ω-V) of (Ni/Au)/Al xGa 1-xN/AIN/ GaN heterostructures as a function of the ...
