Browsing by Keywords "Semiconductors"
Now showing items 1-20 of 20
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Anharmonicity in GaTe layered crystals
(Wiley-VCH Verlag GmbH & Co. KGaA, 2002)The temperature dependencies (10-300 K) of seven Raman-active mode frequencies in layered semiconductor gallium telluride have been measured in the frequency range from 25 to 300 cm -1. Softening and broadening of the ... -
Atomic force microscopy: Methods and applications
(Elsevier, 2017)This chapter provides an overview of atomic force microscopy, covering the fundamental aspects of the associated instrumentation and methodology as well as representative results from the literature highlighting a variety ... -
Deformed octagon-hexagon-square structure of group-IV and group-V elements and III-V compounds
(American Physical Society, 2019)We report the prediction of a two-dimensional (2D) allotrope common to group-IV and group-V elements and III-V compounds, which consist of two nonplanar atomic layers connected by vertical bonds and form deformed octagon, ... -
Donor - acceptor pair recombination in Tl2InGaS4 layered crystals
(2005)Photoluminescence (PL) spectra of Tl2InGaS4 layered single crystals were studied in the temperature range 15-150 K and wide laser excitation intensity range 0.01-110.34 Wcm-2. We observed a total of three PL bands, one ... -
Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer
(AIP Publishing, 2014)In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al2O3 layers are ... -
First-principles study of thin TiOx and bulklike rutile nanowires
(American Physical Society, 2009)We have systematically investigated structural, electronic and magnetic properties of very thin TiOx (x=1,2) nanowires as well as bulklike (110) rutile nanowires by using the first-principles plane-wave pseudopotential ... -
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
(Optical Society of American (OSA), 2013)This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating ... -
Influence of channel layer thickness on the electrical performances of inkjet-printed In-Ga-Zn oxide thin-film transistors
(IEEE, 2010-12-10)Inkjet-printed In-Ga-Zn oxide (IGZO) thin-film transistors (TFTs) with bottom-gate bottom-contact device architecture are studied in this paper. The impact of the IGZO film thickness on the performance of TFTs is investigated. ... -
Infrared photoluminescence from TlGaS2 layered single crystals
(Wiley - V C H Verlag GmbH & Co., 2004)Photolimuniscence (PL) spectra of TlGaS2 layered crystals were studied in the wavelength region 500-1400 nm and in the temperature range 15-115 K. We observed three broad bands centered at 568 nm (A-band), 718 nm (B-band) ... -
Liquid-phase synthesis of nanoparticles and nanostructured materials
(Elsevier, 2018)Nanoparticles less than 100nm in size have attracted significant interest over the past 20 years due to their unique properties led by quantum size effect. This chapter evaluates the synthesis methods in liquid phase ... -
Low thermal-mass LEDs: Size effect and limits
(Optical Society of American (OSA), 2014)In this work, low thermal-mass LEDs (LTM-LEDs) were developed and demonstrated in flip-chip configuration, studying both experimentally and theoretically the enhanced electrical and optical characteristics and the limits. ... -
Nonradiative resonance energy transfer directed from colloidal CdSe/ZnS quantum dots to epitaxial InGaN/GaN quantum wells for solar cells
(Wiley, 2010-06-04)We report on Förster-type nonradiative resonance energy transfer (NRET) directed from colloidal quantum dots (QDs) to epitaxial quantum wells (QWs) with an efficiency of 69.6% at a rate of 1.527 ns-1 for potential application ... -
A photometric investigation of ultra-efficient LEDs with high color rendering index and high luminous efficacy employing nanocrystal quantum dot luminophores
(Optical Society of America, 2009-12-24)We report a photometric study of ultra-efficient light emitting diodes (LEDs) that exhibit superior color rendering index (CRI) and luminous efficacy of optical radiation (LER) using semiconductor quantum dot nanocrystal ... -
Photonic band gaps with layer-by-layer double-etched structures
(A I P Publishing LLC, 1996-09-03)Periodic layer‐by‐layer dielectric structures with full three‐dimensional photonic band gaps have been designed and fabricated. In contrast to previous layer‐by‐layer structures the rods in each successive layer are at an ... -
Physics of nonradiative energy transfer in the complex media of 0D, 2D and 3D materials
(Bilkent University, 2016-07)Quantum-confined colloidal nanostructures with strong excitonic properties have emerged as promising light harvesting components in photonics and optoelectronics over the past 20 years. With their favorable photophysical ... -
Quadrupolar spectra of nuclear spins in strained InxGa1−xAs quantum dots
(American Physical Society, 2012)Self-assembled quantum dots (QDs) are born out of lattice mismatched ingredients where strain plays an indispensable role. Through the electric quadrupolar coupling, strain affects the magnetic environment as seen by the ... -
Resources-a theoretical soup stone ?
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Strain engineering of electronic and optical properties of monolayer diboron dinitride
(American Physical Society, 2021-11-29)We studied the effect of strain engineering on the electronic, structural, mechanical, and optical properties of orthorhombic diboron dinitride (o-B2N2) through first-principles calculations. The 1.7-eV direct band gap ... -
Thermally stimulated currents in n-InS single crystals
(Elsevier Science, 2003)Thermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10-125 K. Experimental evidence is found for four trapping centers present in InS. They are located ... -
Two-dimensional pnictogens: a review of recent progresses and future research directions
(American Institute of Physics, 2019)Soon after the synthesis of two-dimensional (2D) ultrathin black phosphorus and fabrication of field effect transistors thereof, theoretical studies have predicted that other group-VA elements (or pnictogens), N, As, Sb, ...
