Now showing items 1-2 of 2

    • Memristive behavior in a junctionless flash memory cell 

      Orak, I.; Ürel, M.; Bakan, G.; Dana, A. (American Institute of Physics Inc., 2015)
      We report charge storage based memristive operation of a junctionless thin film flash memory cell when it is operated as a two terminal device by grounding the gate. Unlike memristors based on nanoionics, the presented ...
    • Thin-film ZnO charge-trapping memory cell grown in a single ALD step 

      Oruc, F. B.; Cimen, F.; Rizk, A.; Ghaffari, M.; Nayfeh, A.; Okyay, A., K. (Institute of Electrical and Electronics Engineers, 2012-10-26)
      A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first ...