Browsing by Keywords "Semiconductor diodes"
Now showing items 1-7 of 7
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AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain
(2008)We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1570 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. The dark currents ... -
Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
(Elsevier Ltd, 2015)We have studied the admittance and current–voltage characteristics of the Au/Ti/Al2O3/nGaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality ... -
A charge inverter for III-nitride light-emitting diodes
(American Institute of Physics Inc., 2016)In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a ... -
Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon
(AIP Publishing, 2013)A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) ... -
Energy-saving quality road lighting with colloidal quantum dot nanophosphors
(Walter de Gruyter GmbH, 2014)Here the first photometric study of road-lighting white light-emitting diodes (WLEDs) integrated with semiconductor colloidal quantum dots (QDs) is reported enabling higher luminance than conventional light sources, ... -
Förster resonance energy transfer enhanced color-conversion using colloidal semiconductor quantum dots for solid state lighting
(American Institute of Physics, 2009-10-15)In this paper, we present Förster resonance energy transfer (FRET)-enhanced color-conversion using colloidal semiconductor quantum dot nanocrystals (NCs) to make reddish-orange light-emitting diodes for use in ultraefficient ... -
Ta/Si Schottky diodes fabricated by magnetron sputtering technique
(2010)Electrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier ...
