Browsing by Keywords "Semiconductor diodes"
Now showing items 1-8 of 8
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AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain
(2008)We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1570 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. The dark currents ... -
Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
(Elsevier Ltd, 2015)We have studied the admittance and current–voltage characteristics of the Au/Ti/Al2O3/nGaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality ... -
A charge inverter for III-nitride light-emitting diodes
(American Institute of Physics Inc., 2016)In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a ... -
Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon
(AIP Publishing, 2013)A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) ... -
Energy-saving quality road lighting with colloidal quantum dot nanophosphors
(Walter de Gruyter GmbH, 2014)Here the first photometric study of road-lighting white light-emitting diodes (WLEDs) integrated with semiconductor colloidal quantum dots (QDs) is reported enabling higher luminance than conventional light sources, ... -
Förster resonance energy transfer enhanced color-conversion using colloidal semiconductor quantum dots for solid state lighting
(American Institute of Physics, 2009-10-15)In this paper, we present Förster resonance energy transfer (FRET)-enhanced color-conversion using colloidal semiconductor quantum dot nanocrystals (NCs) to make reddish-orange light-emitting diodes for use in ultraefficient ... -
Power saturation in standard and double-AR unfolded laser diode cavities
(Institute of Electrical and Electronics Engineers Inc., 2016)We report modeling and experimental results that demonstrate mechanisms limiting the output power of broad area semiconductor lasers. The modeling comprises numerical simulations of the laser cavity with evolution of ... -
Ta/Si Schottky diodes fabricated by magnetron sputtering technique
(2010)Electrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier ...
