Browsing by Keywords "Semiconductor devices"
Now showing items 1-9 of 9
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Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors
(Institute of Physics Publishing, 2017)In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional ... -
Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
(Elsevier Ltd, 2015)We have studied the admittance and current–voltage characteristics of the Au/Ti/Al2O3/nGaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality ... -
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance
(Institute of Electrical and Electronics Engineers Inc., 2016)In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the ... -
Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
(SPIE, 2014)Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are ... -
Mn2+-doped CdSe/CdS core/multishell colloidal quantum wells enabling tunable carrier-dopant exchange interactions
(American Chemical Society, 2015)In this work, we report the manifestations of carrier-dopant exchange interactions in colloidal Mn2+-doped CdSe/CdS core/multishell quantum wells. The carrier-magnetic ion exchange interaction effects are tunable through ... -
Operation of a novel hot electron vertical cavity surface emitting laser
(SPIE - The International Society for Optical Engineering, 1998-01)The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga 1-xAlxAs p- n ... -
Photovoltaic nanocrystal scintillators hybridized on Si solar cells for enhanced conversion efficiency in UV
(Optical Society of American (OSA), 2008)We propose and demonstrate semiconductor nanocrystal based photovoltaic scintillators integrated on solar cells to enhance photovoltaic device parameters including spectral responsivity, open circuit voltage, short circuit ... -
Quantum mechanical simulation of charge transport in very small semiconductor structures
(IEEE, 1989)A quantum mechanical simulation method of charge transport in very small semiconductor devices, based on the numerical solution of the time-dependent Schrödinger equation (coupled self-consistently to the Poisson equation ... -
TiO2 assisted sensitivity enhancement in photosensitive nanocrystal skins
(Institute of Electrical and Electronics Engineers Inc., 2014)Solution-processable semiconductor nanocrystals (NCs) have been widely used to create novel devices for the photovoltaic, light-emission, light-detection and biosensing applications. They are good candidates especially to ...
