Browsing by Keywords "Semiconductor device structures"
Now showing items 1-9 of 9
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100-GHz resonant cavity enhanced Schottky photodiodes
(Institute of Electrical and Electronics Engineers, 1998)Resonant cavity enhanced (RCE) photodiodes are promising candidates for applications in optical communications and interconnects where ultrafast high-efficiency detection is desirable. We have designed and fabricated RCE ... -
Dynamical screening effects in hot-electron scattering from electron-hole plasma and LO-phonon modes in quantum wires
(Elsevier, 1996)We present a fully dynamical and finite temperature study of the hot-electron momentum relaxation rate and the power loss in a coupled system of electron-hole plasma and bulk LO-phonons in a quantum wire structure. ... -
Effect of cross-sectional geometry on the RPA plasmons of quantum wires
(Pergamon Press, 1994)The effect of cross-sectional geometry on both the intrasubband plasmon and intersubband plasmon of a quantum wire is investigated within a two-subband RPA scheme. Exact analytical electronic wavefunctions for circular, ... -
Energy-transfer rate in a double-quantum-well system due to Coulomb coupling
(Elsevier, 2002)We study the energy-transfer rate for electrons in a double-quantum-well structure, where the layers are coupled through screened Coulomb interactions. The energy-transfer rate between the layers (similar to the Coulomb ... -
High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes
(IEEE, 1998)Widely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity ... -
Hot electron effects in unipolar n-type submicron structures based on GaN, AlN and their ternary alloys
(The Institution of Engineering and Technology, 2003)The authors present an analysis of impact ionisation (II) and related hot electron effects in submicron sized GaN, AlN and their ternary alloys, all of which can support very high field regimes, reaching a few megavolts ... -
Hydrodynamic approach for modelling transport in quantum well device structures
(Institute of Physics Publishing Ltd., 1998)A semiclassical approach for modelling electron transport in quantum well structures is presented. The model is based on the balance equations governing the conservation of particle density, momentum and energy with Monte ... -
In-situ focused ion beam implantation for the fabrication of a hot electron transistor oscillator structure
(1996)Recent advances using in situ focused ion beam implantation during an MBE growth interruption have been exploited to fabricate planar GaAs hot electron structures without the need for shallow ohmic contacts. This novel ... -
Super-radiant surface emission from a quasi-cavity hot electron light emitter
(Springer New York LLC, 1999)The Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure (HELLISH-1) device is a novel surface emitter which utilises hot carrier transport parallel to the layers of a Ga1 - xAlxAs p-n junction incorporating ...
