Browsing by Keywords "Semiconducting silicon"
Now showing items 1-14 of 14
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Chemically specific dynamic characterization of photovoltaic and photoconductivity effects of surface nanostructures
(American Chemical Society, 2010)We report characterization of photovoltaic and photoconductivity effects on nanostructured surfaces through light induced changes in the X-ray photoelectron spectra (XPS). The technique combines the chemical specificity ... -
Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
(A I P Publishing LLC, 2015)Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200°C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the ... -
Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide
(Springer New York LLC, 2015)In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al2O3/HfO2 tunnel oxide and we compare it to the ... -
Experimental and theoretical investigations of electronic and atomic structure of si-nanocrystals formed in sapphire by ion implantation
(2008)The semiconductor nanocomposites based on Si nanocrystals in dielectric matrices attract a great amount of attention due to their ability for luminescence in visible and near-IR part of the electromagnetic spectrum. Si ... -
Memory effect by charging of ultra‐small 2‐nm laser‐synthesized solution processable Si‐nanoparticles embedded in Si–Al2O3–SiO2 structure
(Wiley-VCH Verlag, 2015)A memory structure containing ultra-small 2-nm laser-synthesized silicon nanoparticles is demonstrated. The Si-nanoparticles are embedded between an atomic layer deposited high-κ dielectric Al<inf>2</inf>O<inf>3</inf> layer ... -
Microcavity enhanced amorphous silicon photoluminescence
(IEEE, Piscataway, NJ, United States, 1997)A microcavity enhancement of room temperature photoluminescence (PL) of a hydrogenated amorphous silicon (a-Si:h) was performed. A quantum confinement model was developed to describe the occurrence of the PL in the bulk ... -
New directional acoustic lens: V-groove lens
(IEEE, 1993)A new directional acoustic lens is introduced. The geometry is very similar to the line-focus lens except the lens cavity, which is shaped as a groove with flat-bottom V cross section. The slanted planar edges of the groove ... -
Optically implemented broadband blueshift switch in the terahertz regime
(American Physical Society, 2011-01-18)We experimentally demonstrate, for the first time, an optically implemented blueshift tunable metamaterial in the terahertz (THz) regime. The design implies two potential resonance states, and the photoconductive semiconductor ... -
Practical multi-featured perfect absorber utilizing high conductivity silicon
(Institute of Physics Publishing, 2016)We designed all-silicon, multi-featured band-selective perfect absorbing surfaces based on CMOS compatible processes. The center wavelength of the band-selective absorber can be varied between 2 and 22 μm while a bandwidth ... -
Pseudopotential-based full zone k · p technique for indirect bandgap semiconductors: Si, Ge, diamond and SiC
(2006)The k · p is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands into consideration. ... -
Raman studies of doped polycrystalline silicon from laser-annealed, doped a-Si:H
(Pergamon Press, 1994)We have used Raman scattering to follow the progress of multiple-pulse (sub-melt-threshold) laser annealing in doped hydrogenated amorphous silicon films (a-Si:H) on glass. In phosphorous-doped a-Si:H the Raman signal shows ... -
Simultaneous non-contact atomic force microscopy (nc-AFM)/STM imaging and force spectroscopy of Si(1 0 0)(2 × 1) with small oscillation amplitudes
(Elsevier Science B.V., 2002)Si(1 0 0)(2 × 1) surface is imaged using a new non-contact atomic force microscopy (nc-AFM)/STM with sub-Ångström oscillation amplitudes using stiff tungsten levers. Simultaneous force gradient and STM images of individual ... -
Ultra-low-cost near-infrared photodetectors on silicon
(SPIE, 2015)We demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that ... -
Visible photoluminescence from SiOx films grown by low temperature plasma enhanced chemical vapor deposition
(Pergamon Press, 1995)a-SiOx films of varying stoichiometry have been prepared by low temperature plasma enhanced chemical vapor deposition. The majority of films showed photoluminescence (PL) and films prepared in a narrow range of gas flows ...
