Now showing items 1-10 of 10

    • 45 GHz bandwidth-efficiency resonant cavity enhanced ITO-Schottky photodiodes 

      Bıyıklı, Necmi; Kimukin, İbrahim; Aytür, Orhan; Özbay, Ekmel; Gökkavas, M.; Ünlü, M. S. (OSA, 2001)
      We demonstrated high-performance resonant cavity enhanced ITO-Schottky photodiodes. We achieved a peak efficiency of 75% around 820 nm with a 3-dB bandwidth of 60 GHz resulting in a bandwidth-efficiency product of 45 GHz.
    • 45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes 

      Bıyıklı, Necmi; Kimukin, I.; Aytür, O.; Gökkavas, M.; Ünlü, M. S.; Özbay, Ekmel (IEEE, 2001)
      High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency ...
    • Effective mass of electron in monolayer graphene: Electron-phonon interaction 

      Tiras, E.; Ardali, S.; Tiras, T.; Arslan, E.; Cakmakyapan, S.; Kazar, O.; Hassan, J.; Janzén, E.; Özbay, Ekmel (AIP Publishing LLC, 2013-01-25)
      Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m -1 and magnetic fields up to 11 T, have been used to investigate the electronic ...
    • Energy relaxation of electrons in InGaN quantum wells 

      Sarikavak-Lisesivdin, B.; Lisesivdin, S. B.; Balkan, N.; Atmaca, G.; Narin, P.; Cakmak, H.; Özbay, Ekmel (Springer New York LLC, 2015-04)
      In this study, electron energy relaxation mechanisms in HEMT structures with different InxGa1−xN-channel quantum well (QW) widths are investigated. Theoretical value of the inelastic scattering rates is carried out at ...
    • High-speed transparent indium-tin-oxide based resonant cavity Schottky photodiode with Si/sub 3/N/sub 4//SiO/sub 2/ top Bragg mirror 

      Bıyıklı, Necmi; Kimukin, I.; Aytur, O.; Özbay, Ekmel; Gokkavas, M.; Unlu, S. (IEEE, Piscataway, NJ, United States, 2000)
      Photodetectors demonstrating high bandwidth-efficiency (BWE) products are required for high-performance optical communication and measurement systems. For conventional photodiodes the BWE product is limited due to the ...
    • A hole modulator for InGaN/GaN light-emitting diodes 

      Zhang, Z-H.; Kyaw, Z.; Liu W.; Ji Y.; Wang, L.; Tan S.T.; Sun, X. W.; Demir, Hilmi Volkan (American Institute of Physics, 2015)
      The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active ...
    • Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes 

      Zhang, Y.; Zhang Z.-H.; Tan S.T.; Hernandez-Martinez, P. L.; Zhu B.; Lu S.; Kang, X. J.; Sun, X. W.; Demir, Hilmi Volkan (American Institute of Physics Inc., 2017)
      Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region ...
    • Low-temperature photoluminescence spectra of TlInxGa1-xS2 layer mixed crystals 

      Allakhverdiev, K. R.; Gasanly, N. M.; Aydınlı, Atilla (Pergamon Press, 1995)
      Low-temperature photoluminescence spectra of TlInS2, TlIn0.95Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374 eV (A), 2.570 eV (E) and ...
    • Temperature dependence of the Raman-active phonon frequencies in indium sulfide 

      Gasanly, N. M.; Özkan, H.; Aydınlı, Atilla; Yilmaz, I. (Pergamon Press, 1999)
      The temperature dependence of the Raman-active mode frequencies in indium sulfide was measured in the range from 10 to 300 K. The analysis of the temperature dependence of the A g intralayer optical modes show that Raman ...
    • Thermally stimulated currents in n-InS single crystals 

      Gasanly, N. M.; Aydınlı, Atilla; Yuksek, N. S. (Elsevier Science, 2003)
      Thermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10-125 K. Experimental evidence is found for four trapping centers present in InS. They are located ...