Browsing by Keywords "Semiconducting gallium compounds"
Now showing items 1-18 of 18
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Anharmonicity in GaTe layered crystals
(Wiley-VCH Verlag GmbH & Co. KGaA, 2002)The temperature dependencies (10-300 K) of seven Raman-active mode frequencies in layered semiconductor gallium telluride have been measured in the frequency range from 25 to 300 cm -1. Softening and broadening of the ... -
Anharmonicity of zone-center optical phonons: Raman scattering spectra of GaSe0.5S0.5 layered crystal
(IOPscience, 2002)The temperature dependencies (10-300 K) of the eight Raman-active mode frequencies and linewidths in GaSe0.5S0.5 layered crystal have been measured in the frequency range from 10 to 320 cm-1. We observed softening and ... -
Atomic strings of group IV, III-V, and II-VI elements
(American Institute of Physics, 2004)A systematic first-principles study of atomic strings made by group IV, III-V, and II-VI elements has revealed interesting mechanical, electronic, and transport properties. The double bond structure underlies their unusual ... -
Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors
(IEEE, 2009-10)Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on ... -
Defect luminescence in undoped p-type GaSe
(Taylor & Francis, 2001)Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide ... -
Excitonic improvement of colloidal nanocrystals in salt powder matrix for quality lighting and color enrichment
(OSA - The Optical Society, 2016)Here we report excitonic improvement in color-converting colloidal nanocrystal powders enabled by co-integrating nonpolar greenand red-emitting nanocrystal energy transfer pairs into a single LiCl salt matrix. This leads ... -
Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications
(2006)Semi-insulating character (sheet resistivity of 3.26 × 10 11 Ω/sq) of thick GaN layers was developed for AlGaN/GaN high electron mobility transistor (HEMT) applications on an AlN buffer layer. Electrical and structural ... -
High-performance solar-blind photodetectors based on AlxGa 1_xN heterostructures
(IEEE, 2004)Design, fabrication, and characterization of high-performance AI xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky. p-i-n, and metal-semicondnctor-metal ... -
Hot electron effects in unipolar n-type submicron structures based on GaN, AlN and their ternary alloys
(The Institution of Engineering and Technology, 2003)The authors present an analysis of impact ionisation (II) and related hot electron effects in submicron sized GaN, AlN and their ternary alloys, all of which can support very high field regimes, reaching a few megavolts ... -
Low-temperature photoluminescence spectra of layered semiconductor TlGaS2
(Pergamon Press, 1998)Photoluminescence (PL) spectra of TlGaS2 layered single crystals were studied in the wavelength region 500-860 nm and in the temperature range 9.5-293 K. We observed a total of three PL bands centered at 568 nm (2.183 eV, ... -
Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals
(Elsevier Science, 2001)Photoluminescence (PL) spectra of GaS0.5Se0.5 layered single crystals have been studied in the wavelength range of 565-860 nm and in the temperature range of 15-170 K. Two PL bands centered at 585 nm (2.120 eV) and 640 nm ... -
Optical studies of molecular beam epitaxy grown GaAsSbN / GaAs single quantum well structures
(A I P Publishing LLC, 2007)In this work, the authors present a systematic study on the variation of the structural and the optical properties of GaAsSbNGaAs single quantum wells (SQWs) as a function of nitrogen concentration. These SQW layers were ... -
Temperature dependence of the first-order Raman scattering in GaS layered crystals
(Pergamon Press, 2000)The temperature dependence (15-293 K) of the six Raman-active mode frequencies and linewidths in gallium sulfide has been measured in the frequency range from 15 to 380 cm-1. We observed softening and broadening of the ... -
Temperature-dependent Raman scattering spectra of ε-GaSe layered crystal
(Elsevier Science, 2002)The temperature dependencies (15-300 K) of seven Raman-active mode frequencies and linewidths in layered gallium selenide have been measured in the frequency range from 10 to 320 cm-1. We observed softening and broadening ... -
Thermally stimulated current observation of trapping centers in undoped GaSe layered single crystals
(Wiley, 2001)Undoped p-GaSe layered single crystals were grown using Bridgman technique. Thermally stimulated current measurements in the temperature range of 10-300 K were performed at a heating rate of 0.18 K/s. The analysis of the ... -
Thermally stimulated currents in layered Ga4SeS3 semiconductor
(2004)Thermally stimulated current (TSC) measurements are carried out on nominally undoped Ga4SeS3 layered semiconductor samples with the current flowing along the c-axis in the temperature range of 10 to 150 K. The results are ... -
Trap levels in layered semiconductor Ga2SeS
(Elsevier, 2004)Trap levels in nominally undoped Ga2SeS layered crystals have been characterized by thermally stimulated current (TSC) measurements. During the measurements, current was allowed to flow along the c-axis of the crystals in ... -
Trapping centers in undoped GaS layered single crystals
(Springer, 2003)Nominally undoped p-GaS layered single crystals were grown using the Bridgman technique. Thermally stimulated current measurements in the temperature range 10-300 K were performed at a heating rate of 0.10 K/s. The analysis ...
