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    • High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration 

      Yu, H.-Y.; Ren, S.; Jung, W. S.; Okyay, Ali Kemal; Miller, D. A. B.; Saraswat, K. C. (Institute of Electrical and Electronics Engineers, 2009)
      We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime ...