Now showing items 1-7 of 7

    • Au/TiO2 nanorod-based Schottky-type UV photodetectors 

      Karaagac, H.; Aygun, L. E.; Parlak, M.; Ghaffari, M.; Biyikli, N.; Okyay, A., K. (Wiley, 2012-10-12)
      TiO2 nanorods (NRs) were synthesized on fluorine-doped tin oxide (FTO) pre-coated glass substrates using hydrothermal growth technique. Scanning electron microscopy studies have revealed the formation of vertically-aligned ...
    • Design and optimization of high-speed resonant cavity enhanced Schottky photodiodes 

      Gökkavas, M.; Onat, B. M.; Özbay, E.; Ata, E. P.; Xu, J.; Towe, E.; Ünlü, M. S. (Institute of Electrical and Electronics Engineers, 1999-02)
      Resonant cavity enhanced (RCE) photodiodes (PD's) are promising candidates for applications in optical communications and interconnects where high-speed high-efficiency photodetection is desirable. In RCE structures, the ...
    • Fabrication of high-speed resonant cavity enhanced schottky photodiodes 

      Özbay, E.; Islam, M. S.; Onat, B.; Gökkavas, M.; Aytür, O.; Tuttle, G.; Towe, E.; Henderson, R. H.; Ünlü, M. S. (Institute of Electrical and Electronics Engineers, 1997-05)
      We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption ...
    • On-chip characterization of THz Schottky diodes using non-contact probes 

      Khan, T. M.; Ghobadi, A.; Celik, O.; Caglayan, C.; Biyikli, N.; Okyay, A. K.; Topalli, K.; Sertel, K. (IEEE Computer Society, 2016)
      We present non-contact characterization of GaAs Schottky contacts in the 140-220 GHz band. The non-contact probing technique utilizes planar on-chip antennas that are monolithically integrated with the coplanar waveguide ...
    • A performance-enhanced planar Schottky diode for Terahertz applications: an electromagnetic modeling approach 

      Ghobadi, Amir; Khan, Talha Masood; Celik, Ozan Onur; Biyikli, Necmi; Okyay, Ali Kemal; Topalli, Kagan (Cambridge University Press, 2017)
      In this paper, we present the electromagnetic modeling of a performance-enhanced planar Schottky diode for applications in terahertz (THz) frequencies. We provide a systematic simulation approach for analyzing our Schottky ...
    • Ta/Si Schottky diodes fabricated by magnetron sputtering technique 

      Ocak, Y.S.; Genisel, M.F.; Kiliçoǧlu, T. (2010)
      Electrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier ...
    • Ultra-low-cost near-infrared photodetectors on silicon 

      Nazirzadeh, M.A.; Atar F.B.; Turgut, B.B.; Okyay, A., K. (SPIE, 2015)
      We demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that ...