Browsing by Keywords "Schottky diodes"
Now showing items 1-7 of 7
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Au/TiO2 nanorod-based Schottky-type UV photodetectors
(Wiley, 2012-10-12)TiO2 nanorods (NRs) were synthesized on fluorine-doped tin oxide (FTO) pre-coated glass substrates using hydrothermal growth technique. Scanning electron microscopy studies have revealed the formation of vertically-aligned ... -
Design and optimization of high-speed resonant cavity enhanced Schottky photodiodes
(Institute of Electrical and Electronics Engineers, 1999-02)Resonant cavity enhanced (RCE) photodiodes (PD's) are promising candidates for applications in optical communications and interconnects where high-speed high-efficiency photodetection is desirable. In RCE structures, the ... -
Fabrication of high-speed resonant cavity enhanced schottky photodiodes
(Institute of Electrical and Electronics Engineers, 1997-05)We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption ... -
On-chip characterization of THz Schottky diodes using non-contact probes
(IEEE Computer Society, 2016)We present non-contact characterization of GaAs Schottky contacts in the 140-220 GHz band. The non-contact probing technique utilizes planar on-chip antennas that are monolithically integrated with the coplanar waveguide ... -
A performance-enhanced planar Schottky diode for Terahertz applications: an electromagnetic modeling approach
(Cambridge University Press, 2017)In this paper, we present the electromagnetic modeling of a performance-enhanced planar Schottky diode for applications in terahertz (THz) frequencies. We provide a systematic simulation approach for analyzing our Schottky ... -
Ta/Si Schottky diodes fabricated by magnetron sputtering technique
(2010)Electrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier ... -
Ultra-low-cost near-infrared photodetectors on silicon
(SPIE, 2015-02)We demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that ...