Browsing by Keywords "Schottky barrier diodes"
Now showing items 1-20 of 29
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1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector
(IEEE, Piscataway, NJ, United States, 2000)GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect. -
100-GHz resonant cavity enhanced Schottky photodiodes
(Institute of Electrical and Electronics Engineers, 1998)Resonant cavity enhanced (RCE) photodiodes are promising candidates for applications in optical communications and interconnects where ultrafast high-efficiency detection is desirable. We have designed and fabricated RCE ... -
45 GHz bandwidth-efficiency resonant cavity enhanced ITO-Schottky photodiodes
(Optical Society of America, 2001)We demonstrated high-performance resonant cavity enhanced ITO-Schottky photodiodes. We achieved a peak efficiency of 75% around 820 nm with a 3-dB bandwidth of 60 GHz resulting in a bandwidth-efficiency product of 45 GHz. -
45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes
(IEEE, 2001)High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency ... -
Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes
(Elsevier, 2010-10-13)The current transport mechanisms in (Ni/Au)-AlN/GaN Schottky barrier diodes (SBDs) were investigated by the use of current-voltage characteristics in the temperature range of 80-380 K. In order to determine the true current ... -
Current-Transport mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures
(Elsevier, 2013)Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport ... -
Design, fabrication and characterization of high-performance solarblind AlGaN photodetectors
(2005)Design, fabrication, and characterization of high-performance AlxGal-xN-based photodetectors for solar-blind applications are reported. AlxGal-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal ... -
Electrical characteristics of β-Ga2O3 thin films grown by PEALD
(Elsevier, 2014)In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O 3 thin films were annealed ... -
Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures
(ELSEVIER, 2010)The forward and reverse bias I-V, C-V, and G/ω-V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22Ga 0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer ... -
Electronic properties of polypyrrole/polyindene composite/metal junctions
(Elsevier, 1997)Junction properties between conducting polymer composites of polypyrrole/polyindene (PPy/PIn) with different conductivities and metals like Pt, Au, Al and In have been investigated. Rectifying junctions were observed for ... -
Energetics and Electronic Structures of Individual Atoms Adsorbed on Carbon Nanotubes
(American Chemical Society, 2004)The adsorption of individual atoms on the semiconducting and metallic single-walled carbon nanotubes (SWNT) has been investigated by using the first principles pseudopotential plane wave method within density functional ... -
Fabrication of high-speed resonant cavity enhanced schottky photodiodes
(Institute of Electrical and Electronics Engineers, 1997-05)We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption ... -
Forward tunneling current in Pt/p-InGaN and Pt/n-InGaN Schottky barriers in a wide temperature range
(Elsevier, 2012-07-27)The current-transport mechanisms of the Pt contacts on p-InGaN and n-InGaN were investigated in a wide temperature range (80-360 K) and in the forward bias regime. It was found that the ideality factor (n) values and ... -
Gain and temporal response of AlGaN solar-blind avalanche photodiodes: An ensemble Monte Carlo analysis
(A I P Publishing LLC, 2003)A study was performed on temporal and gain response of AlGaN solar-blind avalanche photodiodes (APD). The ensemble Monte Carlo method was used for the purpose. It was found that without any fitting parameters, reasonable ... -
High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current
(Pergamon Press, 2005-01)Al0.38Ga0.62N/GaN heterojunction solar-blind Schottky photodetectors with low dark current, high responsivity, and fast pulse response were demonstrated. A five-step microwave compatible fabrication process was utilized ... -
High-Performance ALGaN-Based Visible-Blind Resonant Cavity Enhanced Schottky Photodiodes
(2003)We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were ... -
High-performance solar-blind AlGaN photodetectors
(2005)Design, fabrication, and characterization of high-performance Al xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal ... -
High-performance solar-blind AlGaN photodetectors
(2004)High-performance aluminum gallium nitride (AlGaN)-based solar-blind (SB) photodetectors were demonstrated using different device structures. The Al x-Ga1-xN layers structure were grown by metalorganic chemical vapor ... -
High-performance solar-blind AlGaN Schottky photodiodes
(Materials Research Society, 2003)High-performance solar-blind AlGaN-based Schottky photodiodes have been demonstrated. The detectors were fabricated on MOCVD-grown AlGaN/GaN heterostructures using a microwave-compatible fabrication process. Current-voltage, ... -
High-speed 1.3 μm GaAs internal photoemission resonant cavity enhanced photodetector
(IEEE, Piscataway, NJ, United States, 2000)Photoresponse measurements were carried out in the 1100-1500 nm range by using a single-pass monochromator and a tungsten-halogen projection lamp as the light source. Further, high-speed measurements were made with an ...
