Now showing items 1-1 of 1

    • Band alignment issues related to HfO2/SiO2/p-Si gate stacks 

      Sayan, S.; Emge, T.; Garfunkel, E.; Zhao, X.; Wielunski, L.; Bartynski, R. A.; Vanderbilt, D.; Suehle, J. S.; Süzer, Şefik; Banaszak Holl, M. (American Institute of Physics, 2004-12-15)
      The valence and conduction band densities of states for the HfO2/SiO2/Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence ...