Browsing by Keywords "Recess etch"
Now showing items 1-2 of 2
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Design, fabrication, and characterization of normally-off GaN HEMTS
(Bilkent University, 2019-07)GaN-based high-electron-mobility transistors (HEMTs) have been developing rapidly from the time when they were first demonstrated in the 1990s. They have consistently been presented as a displacement technology to silicon ... -
Investigation of a hybrid approach for normally-off GaN HEMTs using fluorine treatment and recess etch techniques
(Institute of Electrical and Electronics Engineers Inc., 2019)A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch ...