Now showing items 1-2 of 2

    • Design, fabrication, and characterization of normally-off GaN HEMTS 

      Gülseren, Melisa Ekin (Bilkent University, 2019-07)
      GaN-based high-electron-mobility transistors (HEMTs) have been developing rapidly from the time when they were first demonstrated in the 1990s. They have consistently been presented as a displacement technology to silicon ...
    • Investigation of a hybrid approach for normally-off GaN HEMTs using fluorine treatment and recess etch techniques 

      Kurt, Gökhan; Gülseren, Melisa Ekin; Salkım, Gurur; Ural, Sertaç; Kayal, Ömer Ahmet; Öztürk, Mustafa; Bütün, Bayram; Kabak, M.; Özbay, Ekmel (Institute of Electrical and Electronics Engineers Inc., 2019)
      A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch ...