Browsing by Keywords "Reactive ion etching"
Now showing items 1-8 of 8
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Electric field dependence of radiative recombination lifetimes in polar InGaN/GaN quantum heterostructures
(IEEE, 2009)We report on external electric field dependence of recombination lifetimes in polar InGaN/GaN quantum heterostructures. In our study, we apply external electric fields one order of magnitude less than and in opposite ... -
High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current
(Pergamon Press, 2005-01)Al0.38Ga0.62N/GaN heterojunction solar-blind Schottky photodetectors with low dark current, high responsivity, and fast pulse response were demonstrated. A five-step microwave compatible fabrication process was utilized ... -
High-speed solar-blind AlGaN Schottky photodiodes
(Cambridge University Press, 2003)We report high-speed solar-blind AlGaN-based Schottky photodiodes. AlGaN/GaN heterostructure device layers were grown on sapphire substrate. The devices were fabricated on AlGaN/GaN heterostructuresusing a microwave ... -
High-speed visible-blind resonant cavity enhanced AlGaN Schottky photodiodes
(Materials Research Society, 2003)We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/Al 0.2Ga 0.8N Bragg mirror. The devices ... -
Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 °c
(American Vacuum Society, 2009)The authors present a comparative study on imaging capabilities of three different micro-Hall probe sensors fabricated from narrow and wide band gap semiconductors for scanning hall probe microscopy at variable temperatures. ... -
In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon
(Nature Publishing Group, 2017)Silicon is an excellent material for microelectronics and integrated photonics 1-3, with untapped potential for mid-infrared optics 4 . Despite broad recognition of the importance of the third dimension 5,6, current ... -
Raman scattering from confined phonons in GaAs/AlGaAs quantum wires
(Academic Press, 1998)We report on photoluminescence and Raman scattering performed at low temperature (T = 10 K) on GaAs/Al 0.3Ga 0.7As quantum-well wires with effective wire widths of L = 100.0 and 10.9 nm prepared by molecular beam epitaxial ... -
Solar-blind A1GaN-based p-i-n photodiodes with low dark current and high detectivity
(IEEE, 2004)We report solar-blind AlxGal1-xN-based heterojunction p-i-n photodiodes with low dark current and high detectivity. After the p+ GaN cap layer was recess etched, measured dark current was below 3 fA for reverse bias values ...
