Now showing items 1-2 of 2

    • Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier 

      Schwindt, R.S.; Kumar V.; Aktas, O.; Lee J.-W.; Adesida I. (2004)
      The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and ...
    • Ultra-low-cost near-infrared photodetectors on silicon 

      Nazirzadeh, M.A.; Atar F.B.; Turgut, B.B.; Okyay, A., K. (SPIE, 2015)
      We demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that ...