Browsing by Keywords "Radiative Recombination Rate"
Now showing items 1-3 of 3
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Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2-2) semipolar versus (0001) polar planes
(AIP Publishing, 2014)The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (11 (2) over bar2) semipolar plane and (0001) polar plane have been comparatively investigated. ... -
Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers
(AIP Publishing, 2013)InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases ... -
Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes
(AIP Publishing, 2013-08-01)The effect of n-AlGaN versus p-AlGaN electron-blocking layers (EBLs) on the performance of InGaN/GaN light-emitting diodes is studied in this work. Experimental results suggest that the n-type EBL leads to higher optical ...
