Browsing by Keywords "Quantum efficiency"
Now showing items 1-20 of 22
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1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector
(IEEE, Piscataway, NJ, United States, 2000)GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect. -
45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes
(IEEE, 2001)High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency ... -
Comparative study of thin film n-i-p a-Si: H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles
(Elsevier Ltd, 2015)In this paper, the effect of gold nanoparticles on n-i-p a-Si:H solar cells with different intrinsic layer (i-layer) thicknesses has been studied. 100nm and 500nm i-layer based n-i-p a-Si:H solar cells were fabricated and ... -
Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers
(Institute of Physics Publishing, 2018)In semiconductor lasers, quantum well intermixing (QWI) with high selectivity using dielectrics often results in lower quantum efficiency. In this paper, we report on an investigation regarding the effect of thermally ... -
Electroluminescence efficiency enhancement in quantum dot light-emitting diodes by embedding a silver nanoisland layer
(Wiley-VCH Verlag, 2015)A colloidal quantum dot light-emitting diode (QLED) is reported with substantially enhanced electroluminescence by embedding a thin layer of Ag nanoislands into hole transport layer. The maximum external quantum efficiency ... -
High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers
(SPIE, 2013)We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave ... -
High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths
(American Institute of Physics Inc., 2017)The dielectric nanophotonics research community is currently exploring transparent material platforms (e.g., TiO2, Si3N4, and GaP) to realize compact high efficiency optical devices at visible wavelengths. Efficient ... -
High-performance 1.55 μm resonant cavity enhanced photodetector
(IEEE, 2002)A high speed and high efficiency resonant cavity enhanced InGaAs based photodetector was demonstrated. A peak quantum efficiency of 66% was measured along with 31 GHz bandwidth with the device. The photoresponse was found ... -
High-speed 1.3 μm GaAs internal photoemission resonant cavity enhanced photodetector
(IEEE, 2000)Resonant cavity enhanced (RCE) photodetectors offer the possibility of overcoming the low quantum efficiency limitation of conventional photodetectors. The RCE detectors are based on the enhancement of the optical field ... -
High-speed InGaAs based resonant cavity enhanced p-i-n photodiodes
(IEEE, 2001)High-speed InGaAs based resonant cavity enhanced photodiodes were discussed. The responses of the photodiodes was measured under high incident optical powers. Bandwidth-efficiency (BWE) product was used to measure the ... -
High-speed resonant-cavity-enhanced Schottky photodiodes
(IEEE, 1998)The top-illuminated Schottky photodiodes were fabricated by a microwave-compatible monolithic microfabrication process. Fabrication started with formation of ohmic contacts to n+ layers. Mesa isolation was followed by a ... -
High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts
(American Institute of Physics, 2003)AlGaN/GaN-based high-speed solar-blind photodetectors were discussed. Current-voltage, spectral responsivity, and high-frequency response characterizations were performed. Breakdown voltages larger than 40 V were obtained. ... -
High-speed visible-blind GaN-based ITO-Schottky photodiodes
(SPIE, 2002)In this paper we present our efforts on the design, fabrication and characterization of high-speed, visible-blind, GaN-based ultra-violet (UV) photodiodes using indium-tin-oxide (ITO) Schottky contacts. ITO is known as a ... -
High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes
(IEEE, 1998)Widely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity ... -
Low-cost, large-scale, ordered ZnO nanopillar arrays for light extraction efficiency enhancement in quantum dot light-emitting diodes
(IEEE, 2014)We report a QLED with enhanced light outcoupling efficiency by applying a layer of periodic ZnO nanopillar arrays. The resulting QLED reaches the record external quantum efficiency (EQE) of 9.34% in green-emitting QLEDs ... -
Low-loss regrowth-free long wavelength quantum cascade lasers
(Institute of Electrical and Electronics Engineers, 2018-12-01)Optical power output is the most sought-after quantity in laser engineering. This is also true for quantum cascade lasers operating especially at long wavelengths. Buried heterostructure cascade lasers with epitaxial ... -
Near-unity emitting copper-doped colloidal semiconductor quantum wells for luminescent solar concentrators
(Wiley-VCH Verlag, 2017)Doping of bulk semiconductors has revealed widespread success in optoelectronic applications. In the past few decades, substantial effort has been engaged for doping at the nanoscale. Recently, doped colloidal quantum dots ... -
Nonradiative recombination-Critical in choosing quantum well number for InGaN/GaN light-emitting diodes
(Optical Society of American (OSA), 2015)In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased ... -
Quantum effects in electrical and thermal transport through nanowires
(Institute of Physics Publishing, 2001)Nanowires, point contacts and metallic single-wall carbon nanotubes are one-dimensional nanostructures which display important size-dependent quantum effects. Quantization due to the transverse confinement and resultant ... -
Stable and efficient colour enrichment powders of nonpolar nanocrystals in LiCl
(Royal Society of Chemistry, 2015)In this work, we propose and develop the inorganic salt encapsulation of semiconductor nanocrystal (NC) dispersion in a nonpolar phase to make a highly stable and highly efficient colour converting powder for colour ...
