Browsing by Keywords "QMSA"
Now showing items 1-5 of 5
-
DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content
(ELSEVIER, 2009-03-17)Experimental Hall data that were carried out as a function of temperature (60-350 K) and magnetic field (0-1.4 T) were presented for Si-doped low Al content (x=0.14) n-AlxGa1-xAs/GaAs heterostructures that were grown by ... -
The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures
(Elsevier BV * North-Holland, 2007-11-01)The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al0.25Ga0.75N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20–350 ... -
A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs
(ELSEVIER, 2008-07-14)We report a simple method to extract the mobility and sheet carrier densities of conduction channels in conventional modulation doped field-effect transistor (MODFET) structures and unintentionally doped GaN-based high-electron ... -
Strain calculations from hall measurements in undoped Al 0.25Ga0.75N/GaN HEMT structures
(American Institute of Physics, 2007)The transport properties of undoped Al0.25Ga0.75N/GaN HEMT structures grown by MOCVD were investigated in a temperature range of 20 K-350 K. With Quantitative Mobility Spectrum Analysis (QMSA) method; it was found that, ... -
Well parameters of two-dimensional electron gas in Al0.88In 0.12N/AlN/GaN/AlN heterostructures grown by MOCVD
(Wiley, 2009-12-01)Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al0.88In 0.12N/AlN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition ...
