Browsing by Keywords "Pulsed laser deposition"
Now showing items 1-18 of 18
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Comparison of trimethylgallium and triethylgallium as "ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition
(AVS Science and Technology Society, 2016-02)GaN films grown by hollow cathode plasma-assisted atomic layer deposition using trimethylgallium (TMG) and triethylgallium (TEG) as gallium precursors are compared. Optimized and saturated TMG/TEG pulse widths were used ... -
Demonstration of flexible thin film transistors with GaN channels
(American Institute of Physics Inc., 2016)We report on the thin film transistors (TFTs) with Gallium Nitride (GaN) channels directly fabricated on flexible substrates. GaN thin films are grown by hollow cathode plasma assisted atomic layer deposition (HCPA-ALD) ... -
Dependence of the substrate structure and the film growth at the junction of YBCO SEJ rf-SQUIDs on the IBE process and effects on the SQUID's characteristics
(Elsevier, 2002)Step edge junction (SEJ) rf-SQUIDs were made of 200 nm thick YBCO films on LaAlO3(100) substrates using pulsed laser deposition technique. The steps on the substrates were developed using a combination of stationary and ... -
Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
(IEEE, 2016)GaN thin films grown by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) at two different substrate temperatures (250 and 450 °C) are compared. Effect of two different Ga source materials named as ... -
Effect of the superconductivity transition on the response of YBCO edge transition bolometers
(2003)Dependence of the phase and magnitude of the response of Y-Ba-Cu-O edge transition bolometers on the superconducting transition is studied. The responses of both large and small area devices were investigated and several ... -
Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
(Institute of Physics Publishing, 2016)In this study, aluminum nitride (AlN) thin films were deposited at 200 �C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The ... -
Fabrication of flexible polymer–GaN core–shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
(Royal Society of Chemistry, 2015)Here we demonstrate the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) processes by fabricating flexible polymer-GaN organic-inorganic core-shell nanofibers at a ... -
Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures
(IEEE, 2015)Hollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our efforts on the development of ... -
Low-temperature grown wurtzite InxGa1−xN thin films via hollow cathode plasma-assisted atomic layer deposition
(Royal Society of Chemistry, 2015-08)Herein, we report on atomic layer deposition of ternary InxGa1−xN alloys with different indium contents using a remotely integrated hollow cathode plasma source. Depositions were carried out at 200 °C using organometallic ... -
Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
(Wiley - V C H Verlag GmbH & Co. KGaA, 2015)Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current ... -
Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
(American Institute of Physics Inc., 2016)In this work, we report on self-limiting growth of InN thin films at substrate temperatures as low as 200 °C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The precursors used in growth experiments ... -
Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
(SPIE, 2014)Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are ... -
Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
(AVS Science and Technology Society, 2014)Gallium nitride (GaN), aluminum nitride (AlN), and AlxGa 1-xN films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200 °C on c-plane sapphire and Si substrates. The dependence of film ... -
Oxygen partial pressure dependence of magnetic, optical and magneto-optical properties of epitaxial cobalt-substituted SrTiO3 films
(OSA - The Optical Society, 2015)Cobalt-substituted SrTiO3 films (SrTi0.70Co0.30O3-δ) were grown on SrTiO3 substrates using pulsed laser deposition under oxygen pressures ranging from 1 μTorr to 20 mTorr. The effect of oxygen pressure on structural, ... -
Response of porcine articular cartilage to irradiation by an ultrafast, burst-mode laser
(Optical Society of America (OSA), 2019)Plasma-mediated ablation by ultrafast pulses is generally considered to be a material-independent process. We show that, in certain circumstances, this assumption may be invalid. Physical processes involved and the impact ... -
Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
(AVS Science and Technology Society, 2016)Gallium nitride (GaN) thin films were grown on Si (100), Si (111), and c-plane sapphire substrates at 200 �C via hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) using GaEt3 and N2/H2 plasma as group-III ... -
Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
(AIP Publishing LLC, 2016-02)Gallium nitride films were grown by hollow cathode plasma-assisted atomic layer deposition using triethylgallium and N2/H2 plasma. An optimized recipe for GaN film was developed, and the effect of substrate temperature was ... -
Superconducting and electro-optical thin films prepared by pulsed laser deposition technique
(Elsevier, 2000-12-15)The pulsed laser deposition (PLD) technique is an excellent method to prepare single crystalline complex oxide thin films. We have successfully grown films for the use in HTS SQUID-devices as well as for thin film optical ...
