Browsing by Keywords "Plasma enhanced chemical vapor deposition"
Now showing items 1-19 of 19
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Characterization of thermally poled germanosilicate thin films
(Optical Society of American (OSA), 2004)We report measurements of the nonlinearity profile of thermally poled low-loss germanosilicate films deposited on fused-silica substrates by PECVD, of interest as potential electro-optic devices. The profiles of films grown ... -
Charge retention in quantized energy levels of nanocrystals
(Elsevier B.V., 2007)Understanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium NCs embedded in a silicon ... -
Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories
(AIP Publishing, 2008-02)Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents ... -
Femtosecond laser crystallization of amorphous Ge
(American Institute of Physics, 2011)Ultrafast crystallization of amorphous germanium (a-Ge) in ambient has been studied. Plasma enhanced chemical vapor deposition grown a-Ge was irradiated with single femtosecond laser pulses of various durations with a range ... -
A figure of merit for optimization of nanocrystal flash memory design
(2008)Nanocrystals can be used as storage media for carriers in flash memories. The performance of a nanocrystal flash memory depends critically on the choice of nanocrystal size and density as well as on the choice of tunnel ... -
Formation of Ge nanocrystals and SiGe in PECVD grown SiNx: Ge thin films
(Elsevier, 2006)Formation of Ge nanocrystals in SiNx matrices has been studied using plasma enhanced chemical vapor deposition in both as deposited samples as well as in post-vacuum annealed samples. Low temperature and short duration ... -
Growth of Ge nanoparticles on SiO2 / Si interfaces during annealing of plasma enhanced chemical vapor deposited thin films
(Elsevier B.V., 2007)Multilayer germanosilicate (Ge:SiO2) films have been grown by plasma enhanced chemical vapor deposition. Each Ge:SiO2 layer is separated by a pure SiO2 layer. The samples were heat treated at 900 °C for 15 and 45 min. ... -
High-speed characterization of solar-blind AlxGa 1-xN p-i-n photodiodes
(Institute of Physics, 2004)We report on the temporal pulse response measurements of solar-blind AlxGa1-xN-based heterojunction p-i-n photodiodes. High-speed characterization of the fabricated photodiodes was carried out at 267 nm. The bandwidth ... -
Highly doped silicon micromachined photonic crystals
(IEEE, Piscataway, NJ, United States, 2000)Summary form only given. Photonic crystals are periodic structures with the property of reflecting the electromagnetic (EM) waves in all directions within a certain frequency range. These structures can be used to control ... -
Microcavity effects in the photoluminescence of hydrogenated amorphous silicon nitride
(SPIE, 1998)Fabry-Perot microcavities are used for the alteration of photoluminescence in hydrogenated amorphous silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ... -
Raman and TEM studies of Ge nanocrystal formation in SiOx: Ge/SiOx multilayers
(Wiley, 2007)Alternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray ... -
The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects
(Royal Society of Chemistry, 2015)Quantum confinement (QC) typically assumes a sharp interface between a nanostructure and its environment, leading to an abrupt change in the potential for confined electrons and holes. When the interface is not ideally ... -
Solar-blind A1GaN-based p-i-n photodiodes with low dark current and high detectivity
(IEEE, 2004)We report solar-blind AlxGal1-xN-based heterojunction p-i-n photodiodes with low dark current and high detectivity. After the p+ GaN cap layer was recess etched, measured dark current was below 3 fA for reverse bias values ... -
Strong enhancement of spontaneous emission in hydrogenated amorphous silicon nitride coupled-microcavity structures
(IEEE, 2001)The modification of spontaneous emission from the hydrogenated amorphous silicon nitride layers in a coupled-microcavity (CMC) structure was investigated. The CMC structure was composed of alternating silicon-oxide and ... -
Structural and loss characterization of SiON layers for optical waveguide applications
(IEEE, 2000)Silicon oxynitride films for optical waveguide applications were grown at 350°C in a PECVD reactor. ATR-FTIR spectroscopy was used to identify the bond structure and absorption characteristics in the mid-infrared region. ... -
Synthesis and size differentiation of Ge nanocrystals in amorphous SiO 2
(Springer, 2006)Germanosilicate layers were grown on Si substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed at different temperatures ranging from 700-1010 °C for durations of 5 to 60 min. Transmission electron ... -
TEM studies of Ge nanocrystal formation in PECVD grown SiO 2: Ge / SiO2 multilayers
(Institute of Physics, 2006)We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicate-oxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were ... -
Visible photoluminescence from low temperature deposited hydrogenated amorphous silicon nitride
(Pergamon Press, 1996)Hydrogenated amorphous silicon nitride (a-SiNx:H) samples have been prepared by plasma enhanced chemical vapor deposition (PECVD) using a mixture of silane (SiH4), nitrogen and ammonia (NH3). Most films exhibit visible ... -
X-ray photoelectron spectroscopic analysis of Si nanoclusters in SiO 2 matrix
(American Chemical Society, 2006)We investigated silicon nanoclusters Si(nc) in a SiO2 matrix prepared by the plasma-enhanced chemical vapor deposition technique, using X-ray photoelectron spectroscopy (XPS) with external voltage stimuli in both static ...
