Browsing by Keywords "Photoresponsivity"
Now showing items 1-7 of 7
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Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
(SPIE, 2014)Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are ... -
MIMIM photodetectors using plasmonically enhanced MIM absorbers
(SPIE, 2017)We demonstrate super absorbing metal-insulator-metal (MIM) stacks and MIMIM photosensitive devices operating at visible and near-infrared (VIS-NIR) spectrum, where absorbing (top) MIM and photocollecting (bottom) MIM can ... -
Nanosecond pulsed laser ablated sub-10 nm silicon nanoparticles for improving photovoltaic conversion efficiency of commercial solar cells
(Institute of Physics Publishing Ltd., 2017)In this paper, we demonstrate the enhancement of photovoltaic (PV) solar cell efficiency using luminescent silicon nanoparticles (Si-NPs). Sub-10 nm Si-NPs are synthesized via pulsed laser ablation technique. These ultra-small ... -
A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation
(IEEE, 2014)We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical ... -
Performance enhancement of GaN metal-semiconductor-metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer
(AVS Science and Technology Society, 2015)The authors demonstrate improved device performance of GaN metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO2 (UT-HfO2) layer on GaN. The UT-HfO2 interfacial layer is grown by atomic layer ... -
Plasmonically enhanced ZnO thin-film-photo-transistor with dynamic responsivity control
(IEEE, 2013)We fabricated an ZnO based thin-film photo-transistor with electrically tunable photo-responsivity operating in the UV and visible spectra and designed plasmonic structures enhancing the device performance up to 6 folds ... -
UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes
(IOP Publishing, 2013)We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, ...
