Browsing by Keywords "Photoresponsivity"

Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

Tekcan, B.; Ozgit Akgun, C.; Bolat, S.; Biyikli, N.; Okyay, A., K. (SPIE, 2014)

Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are ...

MIMIM photodetectors using plasmonically enhanced MIM absorbers

Abedini Dereshgi, S.; Okyay, A. K. (SPIE, 2017)

We demonstrate super absorbing metal-insulator-metal (MIM) stacks and MIMIM photosensitive devices operating at visible and near-infrared (VIS-NIR) spectrum, where absorbing (top) MIM and photocollecting (bottom) MIM can ...

Nanosecond pulsed laser ablated sub-10 nm silicon nanoparticles for improving photovoltaic conversion efficiency of commercial solar cells

Rasouli, H. R.; Ghobadi, A.; Ghobadi, T. G. U.; Ates, H.; Topalli, K.; Okyay, A. K. (Institute of Physics Publishing Ltd., 2017)

In this paper, we demonstrate the enhancement of photovoltaic (PV) solar cell efficiency using luminescent silicon nanoparticles (Si-NPs). Sub-10 nm Si-NPs are synthesized via pulsed laser ablation technique. These ultra-small ...

A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation

Tekcan, B.; Alkis, S.; Alevli, M.; Dietz, N.; Ortac, B.; Biyikli, N.; Okyay, A., K. (IEEE, 2014)

We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical ...

Performance enhancement of GaN metal-semiconductor-metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer

Kumar, M.; Tekcan, B.; Okyay, A., K. (AVS Science and Technology Society, 2015)

The authors demonstrate improved device performance of GaN metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO2 (UT-HfO2) layer on GaN. The UT-HfO2 interfacial layer is grown by atomic layer ...

Plasmonically enhanced ZnO thin-film-photo-transistor with dynamic responsivity control

Ozcan, A.; Battal, E.; Atar F.B.; Okyay, A., K. (2013)

We fabricated an ZnO based thin-film photo-transistor with electrically tunable photo-responsivity operating in the UV and visible spectra and designed plasmonic structures enhancing the device performance up to 6 folds ...

UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes

Alkis, S.; Tekcan, B.; Nayfeh, A.; Okyay, A., K. (IOP Publishing, 2013)

We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, ...