Browsing by Keywords "Photoluminescence"
Now showing items 1-20 of 62
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Analysis of defect related optical transitions in biased AlGaN/GaN heterostructures
(2010)The optical transitions in AlGaN/GaN heterostructures that are grown by metalorganic chemical vapor deposition (MOCVD) have been investigated in detail by using Hall and room temperature (RT) photoluminescence (PL) ... -
Brightly luminescent Cu-Zn-In-S/ZnS Core/shell quantum dots in salt matrices
(De Gruyter, 2019)In the past decades cadmium-free quantum dots (QDs), among which are quaternary colloidal Cu-Zn-In-S/ZnS (CZIS/ZnS) core/shell nanocrystals (NCs), have attracted great scientific interest. Particularly, their low toxicity ... -
CdSe/CdSe1-xTex core/crown heteronanoplatelets: tuning the excitonic properties without changing the thickness
(American Chemical Society, 2017)Here we designed and synthesized CdSe/CdSe1-xTex core/crown nanoplatelets (NPLs) with controlled crown compositions by using the core-seeded-growth approach. We confirmed the uniform growth of the crown regions with ... -
Colloidal nanoplatelet/conducting polymer hybrids: excitonic and material properties
(American Chemical Society, 2016)Here we present the first account of conductive polymer/colloidal nanoplatelet hybrids. For this, we developed DEH-PPV-based polymers with two different anchor groups (sulfide and amine) acting as surfactants for CdSe ... -
CVD grown 2D MoS2 layers: a photoluminescence and fluorescence lifetime imaging study
(Wiley-VCH Verlag, 2016)In this letter, we report on the fluorescence lifetime imaging and accompanying photoluminescence properties of a chemical vapour deposition (CVD) grown atomically thin material, MoS2. µ-Raman, µ-photoluminescence (PL) and ... -
Defect luminescence in undoped p-type GaSe
(Taylor & Francis, 2001)Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide ... -
Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity
(Pergamon Press, 1998)The emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band ... -
Does the donor-acceptor concept work for designing synthetic metals? 1. theoretical investigation of poly(3-cyano-3′-hydroxybithiophene)
(American Chemical Society, 2002)Homo- and copolymers of hydroxythiophene and cyanothiophene have been investigated by employing density functional theory with the aim of determining the effect of donor-acceptor substitution on the electronic structure. ... -
Donor - acceptor pair recombination in Tl2InGaS4 layered crystals
(2005)Photoluminescence (PL) spectra of Tl2InGaS4 layered single crystals were studied in the temperature range 15-150 K and wide laser excitation intensity range 0.01-110.34 Wcm-2. We observed a total of three PL bands, one ... -
Donor-acceptor pair recombination in AgIn5S8 single crystals
(American Institute of Physics, 1999-03-15)Photoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.44-1.91 eV energy region and in the 10-170 K temperature range. The PL band was observed to be centered at 1.65 eV at 10 K and an excitation ... -
Donor-acceptor pair recombination in gallium sulfide
(American Institute of Physics, 2000-12-15)Low temperature photoluminescence of GaS single crystals shows three broad emission bands below 2.4 eV. Temperature and excitation light intensity dependencies of these bands reveal that all of them originate from close ... -
The effect of gadolinium doping on the structural, magnetic and photoluminescence properties of electrospun bismuth ferrite nanofibers
(Elsevier Ltd, 2015)Gadolinium (Gd) doped Bismuth ferrite (BFO) nanofibers (Bi1-xGdxFeO3 (x=0.0, 0.05, 0.10, 0.15 and 0.20)) were synthesized via electrospinning. Scanning Electron Microscope (SEM) analysis showed that the diameter of the ... -
The effect of growth conditions on the optical and structural properties of InGaN/GaN MQW LED structures grown by MOCVD
(Gazi University Eti Mahallesi, 2014)Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, ... -
The effects of surface treatment on optical and vibrational properties of stain-etched silicon
(Pergamon Press, 1995)The effects of surface treatment on optical and vibrational properties of porous silicon. (por-Si) layers grown on p-type Si wafers by electroless etching technique were studied by FTIR spectroscopy and photoluminescence ... -
Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields
(American Institute of Physics, 2009-05-29)Electric field dependent photoluminescence decay kinetics and its radiative component are studied in polar InGaN/GaN quantum heterostructures at low fields. Under externally applied electric field lower than polarization ... -
Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures
(SPIE, 2011)We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm by employing Ag nanostructures on the top of a roughened p-type GaN. After the growth of a blue light emitting diode ... -
Europium (II)-Doped Microporous Zeolite Derivatives with Enhanced Photoluminescence by Isolating Active Luminescence Centers
(American Chemical Society, 2011-10-21)Solid-state reaction is the most common method for preparing luminescent materials. However, the luminescent dopants in the hosts tend to aggregate in the high-temperature annealing process, which causes adverse effect in ... -
Full Visible Range Covering InP/ZnS Nanocrystals with High Photometric Performance and Their Application to White Quantum Dot Light-Emitting Diodes
(Wiley-VCH Verlag, 2012-04-30)High-quality InP/ZnS core–shell nanocrystals with luminescence tunable over the entire visible spectrum have been achieved by a facile one-pot solvothermal method. These nanocrystals exhibit high quantum yields (above 60%), ... -
High-efficiency light-emitting diodes of organometal halide perovskite amorphous nanoparticles
(American Chemical Society, 2016)Organometal halide perovskite has recently emerged as a very promising family of materials with augmented performance in electronic and optoelectronic applications including photovoltaic devices, photodetectors, and ... -
High-quality InP/ZnS nanocrystals with high photometric performance and their application to white quantum dot light-emitting diodes
(IEEE, 2012)Full visible range covering InP/ZnS core-shell nanocrystals with high photometric performance have been prepared. Making use of these nanocrystals, we demonstrate a white quantum dot LED with a high color rendering index ...
