Now showing items 1-10 of 10

    • 1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector 

      Necmi, B.; Kimukin, I.; Ozbay, E.; Tuttle, G. (IEEE, Piscataway, NJ, United States, 2000)
      GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.
    • Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systems 

      Sayan, S.; Bartynski, R.A.; Robertson J.; Suehle J.S.; Vogel, E.; Nguyen, N.V.; Ehrstein J.; Kopanski J.J.; Suzer, S.; Holl, M.B.; Garfunkel, E. (2004)
      We have studied the HfO 2/Hf and HfO 2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum ...
    • Band alignment issues related to HfO2/SiO2/p-Si gate stacks 

      Sayan, S.; Emge, T.; Garfunkel, E.; Zhao, X.; Wielunski, L.; Bartynski, R. A.; Vanderbilt, D.; Suehle, J. S.; Suzer, S.; Banaszak Holl, M. (American Institute of Physics, 2004-12-15)
      The valence and conduction band densities of states for the HfO2/SiO2/Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence ...
    • Differential charging in x-ray photoelectron spectroscopy: a nuisance or a useful tool? 

      Suzer, S. (American Chemical Society, 2003)
      We apply a negative bias to the sample while recording an XPS spectrum to enhance differential (positive) charging. The enhanced differential charging is due to the repulsion of stray electrons from the sample, which ...
    • High-speed 1.3 μm GaAs internal photoemission resonant cavity enhanced photodetector 

      Kimukin, I.; Ozbay, E.; Biyikli, N.; Kartaloğlu, T.; Aytür, O.; Tuttle, G. (IEEE, Piscataway, NJ, United States, 2000)
      Photoresponse measurements were carried out in the 1100-1500 nm range by using a single-pass monochromator and a tungsten-halogen projection lamp as the light source. Further, high-speed measurements were made with an ...
    • High-speed GaAs-based resonant-cavity-enhanced 1.3-μm photodetector 

      Ozbay, E.; Kimukin, i.; Biyikli, N.; Gary, T. (SPIE, 2000)
      High-speed photodetectors operating at 1.3 and 1.55 μm are important for long distance fiber optic based telecommunication applications. We fabricated GaAs based photodetectors operating at 1.3 μm that depend on internal ...
    • Methyldecalin hydrocracking over palladium/zeolite-X 

      Sayan, S.; Demirel, B.; Paul, J. (Elsevier Science Ltd, Exeter, United Kingdom, 2000)
      Hydrocracking of methyldecalin over Pd/REX has been studied with surface sensitive techniques in the critical temperature range 325– 3508C. Results from in situ characterization of adsorbed species, and post-reaction ...
    • Soft x-ray photoemission studies of Hf oxidation 

      Suzer, S.; Sayan, S.; Banaszak Holl, M. M.; Garfunkel, E.; Hussain, Z.; Hamdan, N. M. (A I P Publishing LLC, 2003)
      Charging of oxide films under x rays is an important issue that must be taken into consideration for determination of core-level binding energies as well as valence band offsets. Measurements are taken as a function of ...
    • Variable energy x-ray photoemission studies of alkylsilane based monolayers on gold 

      Owens, T. M.; Süzer, S.; Banaszak Holl, M. M. (American Chemical Society, 2003)
      Gaseous n-hexylsilane (C6H13SiH3), n-octylsilane (C8H17SiH3), and n-octadecylsilane (C18H37SiH3) have been vapor deposited in ultrahigh vacuum (UHV) on freshly evaporated gold surfaces to form monolayers. Surface sensitive ...
    • X-ray photoemission for probing charging/discharging dynamics 

      Suzer, S.; Dâna, A. (American Chemical Society, 2006)
      A novel technique is introduced for probing charging/discharging dynamics of dielectric materials in which X-ray photoemission data is recorded while the sample rod is subjected to ± 10.0 V square-wave pulses with varying ...