Now showing items 1-20 of 45

    • 100-GHz resonant cavity enhanced Schottky photodiodes 

      Onat, B. M.; Gökkavas, M.; Özbay, E.; Ata, E. P.; Towe, E.; Ünlü, M. S. (Institute of Electrical and Electronics Engineers, 1998)
      Resonant cavity enhanced (RCE) photodiodes are promising candidates for applications in optical communications and interconnects where ultrafast high-efficiency detection is desirable. We have designed and fabricated RCE ...
    • 45 GHz bandwidth-efficiency resonant cavity enhanced ITO-Schottky photodiodes 

      Biyikli, N.; Kimukin, I.; Aytur, O.; Ozbay, E.; Gokkavas, M.; Unlu, M. S. (Optical Society of America, 2001)
      We demonstrated high-performance resonant cavity enhanced ITO-Schottky photodiodes. We achieved a peak efficiency of 75% around 820 nm with a 3-dB bandwidth of 60 GHz resulting in a bandwidth-efficiency product of 45 GHz.
    • 45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes 

      Biyikli, N.; Kimukin, I.; Aytür, O.; Gökkavas, M.; Ünlü, M. S.; Ozbay, E. (IEEE, 2001)
      High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency ...
    • Design and optimization of high-speed resonant cavity enhanced Schottky photodiodes 

      Gökkavas, M.; Onat, B. M.; Özbay, E.; Ata, E. P.; Xu, J.; Towe, E.; Ünlü, M. S. (Institute of Electrical and Electronics Engineers, 1999-02)
      Resonant cavity enhanced (RCE) photodiodes (PD's) are promising candidates for applications in optical communications and interconnects where high-speed high-efficiency photodetection is desirable. In RCE structures, the ...
    • Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes 

      Tansel, T.; Kutluer, K.; Salihoglu, Ö.; Aydinli, A.; Aslan, B.; Arikan, B.; Kilinc, M. C.; Ergun, Y.; Serincan, U.; Turan, R. (IEEE, 2012)
      The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ...
    • Electrically-reconfigurable integrated photonic switches 

      Fidaner O.; Demir, H. V.; Sabnis V.A.; Harris Jr. J.S.; Miller, D.A.B.; Zheng J.-F. (2004)
      We report remotely electrically reconfigurable photonic switches that intimately integrate waveguide electroabsorption modulators with surface-normal photodiodes, avoiding conventional electronics. These switches exhibit ...
    • Electron initiated impact ionization in AlGaN alloys 

      Bulutay, C. (Institute of Physics, 2002)
      Detailed impact ionization (II) analysis of electrons is presented for AlGaN alloys as a vital resource for solar-blind avalanche photodiode and high power transistor applications. Necessary ingredients for the II ...
    • Electronic and optical properties of 4.2 μm"N" structured superlattice MWIR photodetectors 

      Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydinli, A. (Elsevier, 2013)
      We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier ...
    • Enhanced photoresponse of conformal TiO2/Ag nanorod array-based Schottky photodiodes fabricated via successive glancing angle and atomic layer deposition 

      Haider A.; Cansizoglu, H.; Cansizoglu, M. F.; Karabacak, T.; Okyay, A., K.; Biyikli, N. (AVS Science and Technology Society, 2015)
      In this study, the authors demonstrate a proof of concept nanostructured photodiode fabrication method via successive glancing angle deposition (GLAD) and atomic layer deposition (ALD). The fabricated metal-semiconductor ...
    • Experimental evaluation of impact ionization coefficients in Al xGa1-xN based avalanche photodiodes 

      Tut, T.; Gökkavas, M.; Bütün, B.; Bütün, S.; Ülker, E.; Özbay, E. (AIP Publishing LLC, 2006)
      The authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization ...
    • Fabrication of high-speed resonant cavity enhanced schottky photodiodes 

      Özbay, E.; Islam, M. S.; Onat, B.; Gökkavas, M.; Aytür, O.; Tuttle, G.; Towe, E.; Henderson, R. H.; Ünlü, M. S. (Institute of Electrical and Electronics Engineers, 1997-05)
      We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption ...
    • Gain and temporal response of AlGaN solar-blind avalanche photodiodes: An ensemble Monte Carlo analysis 

      Sevik, C.; Bulutay, C. (A I P Publishing LLC, 2003)
      A study was performed on temporal and gain response of AlGaN solar-blind avalanche photodiodes (APD). The ensemble Monte Carlo method was used for the purpose. It was found that without any fitting parameters, reasonable ...
    • Grating coupler integrated photodiodes for plasmon resonance based sensing in fluidic systems 

      Turker, B.; Guner, H.; Ayas S.; Ekiz O. O.; Acar, H.; Guler, M. O.; Dâna, A. (Institute of Electrical and Electronics Engineers, 2011)
      We demonstrate an integrated sensor combining a grating-coupled plasmon resonance surface with a planar photodiode. Plasmon enhanced transmission is employed as a sensitive refractive index (RI) sensing mechanism and ...
    • High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current 

      Tut, T.; Biyikli, N.; Kimukin, I.; Kartaloglu, T.; Aytur, O.; Unlu, M. S.; Ozbay, E. (Pergamon Press, 2005-01)
      Al0.38Ga0.62N/GaN heterojunction solar-blind Schottky photodetectors with low dark current, high responsivity, and fast pulse response were demonstrated. A five-step microwave compatible fabrication process was utilized ...
    • High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers 

      Ergun, Y.; Hostut, M.; Tansel, T.; Muti, A.; Kilic, A.; Turan, R.; Aydinli, A. (2013)
      We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave ...
    • High-performance 1.55 μm resonant cavity enhanced photodetector 

      Kimukin I.; Biyikli, N.; Ozbay, E. (2002)
      A high speed and high efficiency resonant cavity enhanced InGaAs based photodetector was demonstrated. A peak quantum efficiency of 66% was measured along with 31 GHz bandwidth with the device. The photoresponse was found ...
    • High-Performance ALGaN-Based Visible-Blind Resonant Cavity Enhanced Schottky Photodiodes 

      Kimukin I.; Biyikli, N.; Kartaloglu, T.; Aytür O.; Ozbay, E. (2003)
      We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were ...
    • High-performance solar-blind AlGaN photodetectors 

      Ozbay, E.; Tut, T.; Biyikli, N. (2005)
      Design, fabrication, and characterization of high-performance Al xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal ...
    • High-performance solar-blind AlGaN Schottky photodiodes 

      Biyikli, N.; Kartaloglu, T.; Aytur, O.; Kimukin, I.; Ozbay, E. (Materials Research Society, 2003)
      High-performance solar-blind AlGaN-based Schottky photodiodes have been demonstrated. The detectors were fabricated on MOCVD-grown AlGaN/GaN heterostructures using a microwave-compatible fabrication process. Current-voltage, ...
    • High-performance solar-blind photodetectors based on AlxGa 1_xN heterostructures 

      Ozbay, E.; Biyikli, N.; Kimukin, I.; Kartaloglu, T.; Tut, T.; Aytür, O. (IEEE, 2004)
      Design, fabrication, and characterization of high-performance AI xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky. p-i-n, and metal-semicondnctor-metal ...