Now showing items 1-20 of 24

    • 100-GHz resonant cavity enhanced Schottky photodiodes 

      Onat, B. M.; Gökkavas, M.; Özbay, E.; Ata, E. P.; Towe, E.; Ünlü, M. S. (Institute of Electrical and Electronics Engineers, 1998)
      Resonant cavity enhanced (RCE) photodiodes are promising candidates for applications in optical communications and interconnects where ultrafast high-efficiency detection is desirable. We have designed and fabricated RCE ...
    • A1GaN UV photodetectors : from micro to nano 

      Bütün, Serkan (Bilkent University, 2011)
      The absorption edge of AlGaN based alloys can be tuned from deep UV to near UV by changing the composition. This enables the use of the material in various technological applications such as military, environmental ...
    • AlxGa1-xN based solar blind Schottky photodiodes 

      Tut, Turgut (Bilkent University, 2004)
      Photodetectors are essential components of optoelectronic integrated circuits and fiber optic communication systems. AlxGa1−xN is a promising material for optoelectronics and electronics. Applications include blue and ...
    • A Comparative Passivation Study for InAs / GaSb Pin Superlattice Photodetectors 

      Salihoglu, O.; Muti, A.; Aydinli, A. (IEEE Institute of Electrical and Electronics Engineers, 2013-08)
      In the quest to find ever better passivation techniques for infrared photodetectors, we explore several passivation layers using atomic layer deposition (ALD). We compare the impact of these layers on detectors fabricated ...
    • Design, fabrication and characterization of high-performance solarblind AlGaN photodetectors 

      Ozbay, E. (2005)
      Design, fabrication, and characterization of high-performance AlxGal-xN-based photodetectors for solar-blind applications are reported. AlxGal-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal ...
    • Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector 

      Kumar, M.; Jeong, H.; Polat, K.; Okyay, A., K.; Lee, D. (Institute of Physics Publishing, 2016)
      We report on the fabrication and characterization of a Schottky ultraviolet graphene/AlGaN/GaN photodetector (PD). The fabricated device clearly exhibits rectification behaviour, indicating that the Schottky barrier is ...
    • Fabrication and characterization of high speed resonant cavity enhanced Schottky photodiodes 

      Islam, M Saiful (Bilkent University, 1996)
      High speed, high external quantum efficiency and narrow spectral linewidth make resonant cavity enhanced (RC E) Schottky photodetector a good candidate for telecommunication applications. In this thesis, we present our ...
    • Gibbs free energy assisted passivation layers 

      Salihoglu, O.; Tansel T.; Hostut M.; Ergun Y.; Aydinli A. (SPIE, 2016)
      Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical ...
    • Graphene based flexible electrochromic devices 

      Polat, E. O.; Balci, O.; Kocabas, C. (Nature Publishing Group, 2014-10-01)
      Graphene emerges as a viable material for optoelectronics because of its broad optical response and gate-tunable properties. For practical applications, however, single layer graphene has performance limits due to its small ...
    • The growth, fabrication and characterization of high performance AI(formula)Ga(formula)N metal-semiconductor-metal photodiodes 

      Bütün, Serkan (Bilkent University, 2006)
      High performance UV photodetectors have attracted unwarranted attention for various applications, such as in military, telecommunication, and biological imaging, as an AlxGa1-xN material system is also rather suitable ...
    • High speed and high efficiency infrared photodetectors 

      Kimukin, İbrahim (Bilkent University, 2004)
      The increasing demand for telecommunication systems resulted in production of high performance components. Photodetectors are essential components of optoelectronic integrated circuits and fiber optic communication ...
    • High-performance AlxGA1-xN-Based UV photodetectors for visible/solar-blind applications 

      Bıyıklı, Necmi (Bilkent University, 2004)
      High-performance detection of ultraviolet (UV) radiation is of great importance for a wide range of applications including flame sensing, environmental (ozone layer) monitoring, detection of biological/chemical ...
    • High-performance solar-blind AlGaN photodetectors 

      Ozbay, E.; Tut, T.; Biyikli, N. (2005)
      Design, fabrication, and characterization of high-performance Al xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal ...
    • High-performance solar-blind photodetectors based on AlxGa 1_xN heterostructures 

      Ozbay, E.; Biyikli, N.; Kimukin, I.; Kartaloglu, T.; Tut, T.; Aytür, O. (IEEE, 2004)
      Design, fabrication, and characterization of high-performance AI xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky. p-i-n, and metal-semicondnctor-metal ...
    • High-Speed InSb photodetectors on GaAs for mid-IR applications 

      Kimukin, I.; Biyikli, N.; Kartaloǧlu, T.; Aytür, O.; Ozbay, E. (IEEE, 2004)
      We report p-i-n type InSb-based high-speed photodetectors grown on GaAs substrate. Electrical and optical properties of photodetectors with active areas ranging from 7.06 × 10 -6 cm 2 to 2.25 × 10 -4 cm 2 measured at 77 K ...
    • InGaAs-based high-performance p-i-n photodiodes 

      Kimukin, I.; Biyikli, N.; Butun, B.; Aytur, O.; Ünlü, S. M.; Ozbay, E. (IEEE, 2002-03)
      In this letter, we have designed, fabricated, and characterized high-speed and high efficiency InGaAs-based p-i-n photodetectors with a resonant cavity enhanced structure. The devices were fabricated by a microwave-compatible ...
    • Low dark current N structure superlattice MWIR photodetectors 

      Salihoglu, O.; Muti, A.; Turan, R.; Ergun, Y.; Aydinli, A. (SPIE, 2014)
      Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R0A) which is directly related to dark current of the detector. Dark current arises ...
    • A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation 

      Tekcan, B.; Alkis, S.; Alevli, M.; Dietz, N.; Ortac, B.; Biyikli, N.; Okyay, A., K. (IEEE, 2014)
      We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical ...
    • Passivation of type II InAs / GaSb superlattice photodetectors with atomic layer deposited Al2O3 

      Salihoglu, O.; Muti, A.; Kutluer, K.; Tansel, T.; Turan, R.; Kocabas, C.; Aydinli, A. (SPIE, 2012)
      We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma ...
    • A plasmonic enhanced photodetector based on silicon nanocrystals obtained through laser ablation 

      Alkis, S.; Oruç, F. B.; Ortaç, B.; Koşger, A. C.; Okyay, A., K. (Institute of Physics Publishing, 2012-10-18)
      We present a proof-of-concept photodetector which is sensitive in the visible spectrum. Silicon nanocrystals (Si-NCs) obtained by laser ablation are used as the active absorption region. Si-NC films are formed from a ...