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    • Extracting the temperature distribution on a phase-change memory cell during crystallization 

      Bakan, G.; Gerislioglu, B.; Dirisaglik, F.; Jurado, Z.; Sullivan, L.; Dana, A.; Lam, C.; Gokirmak A.; Silva, H. (American Institute of Physics Inc., 2016-10)
      Phase-change memory (PCM) devices are enabled by amorphization- and crystallization-induced changes in the devices' electrical resistances. Amorphization is achieved by melting and quenching the active volume using short ...