Browsing by Keywords "Passivation"
Now showing items 1-20 of 27
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Ab initio study of electronic properties of armchair graphene nanoribbons passivated with heavy metal elements
(Elsevier, 2019)In this study, electronic properties of graphene nanoribbons with armchair edges (AGNRs) have been investigated with Density Functional Theory (DFT). Effects of heavy metal (HM) elements, including Zinc (Zn), Cadmium (Cd) ... -
Ab initio study of Ru-terminated and Ru-doped armchair graphene nanoribbons
(Taylor and Francis, 2012)We investigate the effects of ruthenium (Ru) termination and Ru doping on the electronic properties of armchair graphene nanoribbons (AGNRs) using first-principles methods. The electronic band structures, geometries, density ... -
All-solution-processed, oxidation-resistant copper nanowire networks for optoelectronic applications with year-long stability
(American Chemical Society, 2020)Copper nanowires (Cu NWs) hold promise as they possess equivalent intrinsic electrical conductivity and optical transparency to silver nanowires (Ag NWs) and cost substantially less. However, poor resistance to oxidation ... -
Atomic layer deposited Al 2O 3 passivation of type II InAs/GaSb superlattice photodetectors
(AIP, 2012)Taking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al 2O 3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single ... -
Changes in the resistance to corrosion of thermally passivated titanium aluminide during exposure to sodium chloride solution
(Kluwer Academic Publishers, 2015)In this study the surface of Ti-47Al-2Cr (at. %) was modified by heating and exposure to nitrogen gas flow to form a predominantly oxide layer on the surface. Samples were then immersed in Ringer's solution and 3.5 wt. % ... -
A Comparative Passivation Study for InAs / GaSb Pin Superlattice Photodetectors
(IEEE Institute of Electrical and Electronics Engineers, 2013-08)In the quest to find ever better passivation techniques for infrared photodetectors, we explore several passivation layers using atomic layer deposition (ALD). We compare the impact of these layers on detectors fabricated ... -
The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AIN/GaN heterostructures
(Wiley, 2010)(Ni/Au)Alx Ga1-x N/AlN/GaN(x = 0.22) heterostructures with and without a passivation layer of the SiNx were fabricated in order to see the effect of the insulator layer on the main electrical parameters such as zero-bias ... -
Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes
(IEEE, 2012)The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ... -
Electrical and chemical characterization of chemically passivated silicon surfaces
(IEEE, 2008)The surface composition of chemically passivated silicon substrates is investigated using XPS and FTIR techniques. The samples are passivated with methanol, quinhydrone-methanol and iodine-methanol solution after HF ... -
Electronic properties of zigzag ZnO nanoribbons with hydrogen and magnesium passivations
(Elsevier, 2018)In this study, the electronic properties of ZnO nanoribbons with zigzag edges (ZZnONr) have been investigated with Density Functional Theory (DFT). After a geometric optimization, the electronic band structures, the density ... -
First-principles calculations of Pd-terminated symmetrical armchair graphene nanoribbons
(Elsevier, 2013)The effects of Palladium (Pd) termination on the electronic properties of armchair graphene nanoribbons (AGNRs) were calculated by using ab initio calculations. After a geometric optimization process, the electronic band ... -
Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures
(Elsevier, 2010)The dielectric properties and AC electrical conductivity (σ ac)of the (Ni/Au)/Al 0.22Ga 0.78N/AlN/GaN heterostructures, with and without the SiNx passivation, have been investigated by capacitance-voltage and conductance-voltage ... -
Gate bias characterization of CNT-TFT DNA sensors
(IEEE, 2009-12)This paper follows the approach in the works of Gui et al. (2007), that use the change in the current of carbon nanotube thin film transistors (CNT-TFT) with DNA attachment and DNA hybridization. The authors have studied ... -
Germanium for high performance MOSFETs and optical interconnects
(2008-10)It is believed that to continue the scaling of silicon CMOS innovative device structures and new materials have to be created in order to continue the historic progress in information processing and transmission. Recently ... -
Gibbs free energy assisted passivation layers
(SPIE, 2016)Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical ... -
Investigation of angstrom-thick aluminium oxide passivation layers to improve the gate lag performance of GaN HEMTs
(IOP, 2019-07)In this paper, we report an angstrom-thick atomic layer deposited (ALD) aluminum oxide (Al2O3) dielectric passivation layer for an AlGaN/GaN high electron mobility transistor (HEMT). Our results show a 55% improvement in ... -
Low dark current N structure superlattice MWIR photodetectors
(SPIE, 2014)Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R0A) which is directly related to dark current of the detector. Dark current arises ... -
Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared
(SPIE, 2013)We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid- Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise ... -
Low-loss regrowth-free long wavelength quantum cascade lasers
(Institute of Electrical and Electronics Engineers, 2018-12-01)Optical power output is the most sought-after quantity in laser engineering. This is also true for quantum cascade lasers operating especially at long wavelengths. Buried heterostructure cascade lasers with epitaxial ... -
Passivation of InSb infrared photodetectors
(Bilkent University, 2010)Infrared detectors have wide range applications in both military and civilian life. One of the most commonly used infrared detectors is InSb detectors. InSb detector technology has been developing since 1950s. Fabricating ...
